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Measurement of net dopant concentration via dynamic photoluminescence

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2012

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Giesecke, Johannes
Warta, Wilhelm

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http://nbn-resolving.de/urn:nbn:de:bsz:352-250827
DOI (zitierfähiger Link)
https://doi.org/10.1063/1.4752722
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Journal of Applied Physics. 2012, 112(6), pp. 063704. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.4752722

Zusammenfassung

This paper presents a class of methods to determine net dopant concentration of silicon wafers by means of dynamic or quasi-steady-state photoluminescence. In contrast to resistivity measurements, this approach is independent of assumptions about dopant type and majority carrier mobility. The latter fact makes it particularly interesting for the determination of net dopant concentration in compensated silicon, where conventional mobility models involving only one dopant species have been reported to fail. Our approach also allows access to majority carrier mobility via combination of net dopant concentration as inferred from photoluminescence with a resistivity measurement.

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530 Physik

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ISO 690GIESECKE, Johannes, Martin SCHUBERT, Wilhelm WARTA, 2012. Measurement of net dopant concentration via dynamic photoluminescence. In: Journal of Applied Physics. 2012, 112(6), pp. 063704. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.4752722
BibTex
@article{Giesecke2012Measu-25082,
  year={2012},
  doi={10.1063/1.4752722},
  title={Measurement of net dopant concentration via dynamic photoluminescence},
  number={6},
  volume={112},
  issn={0021-8979},
  journal={Journal of Applied Physics},
  author={Giesecke, Johannes and Schubert, Martin and Warta, Wilhelm},
  note={Article Number: 063704}
}
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