Contact Formation of Silver Paste and Atmospheric Pressure Chemical Vapor Deposition (n) Poly-Silicon Passivating Contacts on Planar and Textured Surfaces

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One of the main challenges for the industrialisation of the passivating contact approach for Si solar cells is the metallization with screen-printed paste while maintaining the low saturation current density. By using a non-commercial Ag paste to metallize APCVD (n) poly-Si we investigate metal contact formation for passivating contacts on planar and textured substrates. The paste creates deep imprints caused by silver crystallite formation at the pyramid tips of textured silicon wafers. In contrast, on planar wafers the silver crystallite growth stops at the interface between poly-Si and the Si wafer. Similar contact resistivities are determined comparing textured and planar Si samples. On planar samples a contact resistivity of 4.6(14) mΩcm2 and a saturation current density of only 141(10) fA/cm2 for the metallised contact area is demonstrated. Textured samples with a contact resistivity of 2.7(17) mΩcm2 show a higher saturation current of 480(40) fA/cm2. This etching behavior is investigated by structural and elemental analyses using scanning electron microscopy.

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ISO 690GLATTHAAR, Raphael, Frank HUSTER, Tobias OKKER, Beatriz Cela GREVEN, Sven SEREN, Giso HAHN, Barbara TERHEIDEN, 2022. Contact Formation of Silver Paste and Atmospheric Pressure Chemical Vapor Deposition (n) Poly-Silicon Passivating Contacts on Planar and Textured Surfaces. In: Physica Status Solidi (A) - Applications and Materials Science. Wiley. 2022, 219(24), 2200501. ISSN 1862-6300. eISSN 1862-6319. Available under: doi: 10.1002/pssa.202200501
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@article{Glatthaar2022-11Conta-58891,
  year={2022},
  doi={10.1002/pssa.202200501},
  title={Contact Formation of Silver Paste and Atmospheric Pressure Chemical Vapor Deposition (n) Poly-Silicon Passivating Contacts on Planar and Textured Surfaces},
  number={24},
  volume={219},
  issn={1862-6300},
  journal={Physica Status Solidi (A) - Applications and Materials Science},
  author={Glatthaar, Raphael and Huster, Frank and Okker, Tobias and Greven, Beatriz Cela and Seren, Sven and Hahn, Giso and Terheiden, Barbara},
  note={Article Number: 2200501}
}
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