Publikation: Anomalous Nernst effect in perpendicularly magnetized τ-MnAl thin films
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2023
Autor:innen
Scheffler, Daniel
Beckert, Sebastian
Reichlova, Helena
Woodcock, Thomas G.
Thomas, Andy
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Deutsche Forschungsgemeinschaft (DFG): 380033763
Deutsche Forschungsgemeinschaft (DFG): 425217212
Deutsche Forschungsgemeinschaft (DFG): SFB 1432
Deutsche Forschungsgemeinschaft (DFG): 380033763
Deutsche Forschungsgemeinschaft (DFG): 425217212
Deutsche Forschungsgemeinschaft (DFG): 425217212
Deutsche Forschungsgemeinschaft (DFG): SFB 1432
Deutsche Forschungsgemeinschaft (DFG): 380033763
Deutsche Forschungsgemeinschaft (DFG): 425217212
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AIP Advances. AIP Publishing. 2023, 13(12), 125227. eISSN 2158-3226. Available under: doi: 10.1063/5.0179071
Zusammenfassung
τ-MnAl is interesting for spintronic applications as a ferromagnet with perpendicular magnetic anisotropy due to its high uniaxial magnetocrystalline anisotropy. Here, we report on the anomalous Nernst effect of sputter deposited τ-MnAl thin films. We demonstrate a robust anomalous Nernst effect at temperatures of 200 and 300 K with a hysteresis similar to the anomalous Hall effect and the magnetization of the material. The anomalous Nernst coefficient of (0.6 ± 0.24) µV/K at 300 K is comparable to other perpendicular magnetic anisotropy thin films. Therefore, τ-MnAl is a promising candidate for spin-caloritronic research.
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530 Physik
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SCHEFFLER, Daniel, Sebastian BECKERT, Helena REICHLOVA, Thomas G. WOODCOCK, Sebastian T. B. GOENNENWEIN, Andy THOMAS, 2023. Anomalous Nernst effect in perpendicularly magnetized τ-MnAl thin films. In: AIP Advances. AIP Publishing. 2023, 13(12), 125227. eISSN 2158-3226. Available under: doi: 10.1063/5.0179071BibTex
@article{Scheffler2023Anoma-69287,
year={2023},
doi={10.1063/5.0179071},
title={Anomalous Nernst effect in perpendicularly magnetized τ-MnAl thin films},
number={12},
volume={13},
journal={AIP Advances},
author={Scheffler, Daniel and Beckert, Sebastian and Reichlova, Helena and Woodcock, Thomas G. and Goennenwein, Sebastian T. B. and Thomas, Andy},
note={Article Number: 125227}
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<dcterms:abstract>τ-MnAl is interesting for spintronic applications as a ferromagnet with perpendicular magnetic anisotropy due to its high uniaxial magnetocrystalline anisotropy. Here, we report on the anomalous Nernst effect of sputter deposited τ-MnAl thin films. We demonstrate a robust anomalous Nernst effect at temperatures of 200 and 300 K with a hysteresis similar to the anomalous Hall effect and the magnetization of the material. The anomalous Nernst coefficient of (0.6 ± 0.24) µV/K at 300 K is comparable to other perpendicular magnetic anisotropy thin films. Therefore, τ-MnAl is a promising candidate for spin-caloritronic research.</dcterms:abstract>
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