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Minority charge carrier lifetime mapping of crystalline silicon wafers by time-resolved photoluminescence imaging

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2011

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http://nbn-resolving.de/urn:nbn:de:bsz:352-161357
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https://doi.org/10.1063/1.3630031
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Journal of Applied Physics. 2011, 110(5), 054508. ISSN 0021-8979. Available under: doi: 10.1063/1.3630031

Zusammenfassung

A camera-based method to record spatially and time-resolved photoluminescence images of crystalline silicon wafers was developed. The camera signal is modulated by a rotating shutter wheel, allowing for a wide range of camera types to be used for the measurement and easy integration into existing photoluminescence setups. The temporal resolution is sufficient to record the decay curve of photoexcited charge carriers in surface-passivated silicon wafers. A transient measurement of minority carrier lifetimes down to less than 10 μs can be obtained for each pixel individually, without the need for any external calibration.

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530 Physik

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carrier lifetime, elemental semiconductors, minority carriers, passivation, photoluminescence, silicon, time resolved spectra

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ISO 690KILIANI, David, Gabriel MICARD, Benjamin STEUER, Bernd RAABE, Axel HERGUTH, Giso HAHN, 2011. Minority charge carrier lifetime mapping of crystalline silicon wafers by time-resolved photoluminescence imaging. In: Journal of Applied Physics. 2011, 110(5), 054508. ISSN 0021-8979. Available under: doi: 10.1063/1.3630031
BibTex
@article{Kiliani2011Minor-16135,
  year={2011},
  doi={10.1063/1.3630031},
  title={Minority charge carrier lifetime mapping of crystalline silicon wafers by time-resolved photoluminescence imaging},
  number={5},
  volume={110},
  issn={0021-8979},
  journal={Journal of Applied Physics},
  author={Kiliani, David and Micard, Gabriel and Steuer, Benjamin and Raabe, Bernd and Herguth, Axel and Hahn, Giso},
  note={Article Number: 054508}
}
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