Publikation: Influence of emitter layers on LeTID kinetics in multicrystalline silicon
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The influence of emitter layers on LeTID kinetics in multicrystalline silicon is analysed in this work. Multicrystalline silicon samples with emitter layers with sheet resistivity of 60, 175, 200, 230 and 360 Ω/sq have been processed and exposed afterwards to 1 sun illumination at 75ºC for more than 2000 h. The effective lifetime of the minority charge carriers of the samples has been measured repetitively by spatially resolved photoluminescence. The resulting lifetime maps are analysed and the effective defect concentration of the samples is calculated. This approach leads to different degradation rates, depending on the emitter sheet resistivity, and to the same defect regeneration rate, but differing in the onset of regeneration.
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OTAEGI, Alona, Daniel SKORKA, Andreas SCHMID, Annika ZUSCHLAG, Juan Carlos JIMENO, Giso HAHN, 2018. Influence of emitter layers on LeTID kinetics in multicrystalline silicon. 35th European Photovoltaic Solar Energy Conference and Exhibition. Brussels, 24. Sept. 2018 - 28. Sept. 2018. In: VERLINDEN, Pierre, ed. and others. 35th European Photovoltaic Solar Energy Conference and Exhibition. München: WIP, 2018, pp. 293-297. ISBN 978-3-936338-50-8BibTex
@inproceedings{Otaegi2018Influ-45200, year={2018}, title={Influence of emitter layers on LeTID kinetics in multicrystalline silicon}, url={https://www.eupvsec-planner.com/presentations/c45789/influence_of_emitter_layers_on_letid_kinetics_in_multicrystalline_silicon.htm}, isbn={978-3-936338-50-8}, publisher={WIP}, address={München}, booktitle={35th European Photovoltaic Solar Energy Conference and Exhibition}, pages={293--297}, editor={Verlinden, Pierre}, author={Otaegi, Alona and Skorka, Daniel and Schmid, Andreas and Zuschlag, Annika and Jimeno, Juan Carlos and Hahn, Giso} }
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