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Subpicosecond carrier transport in GaAs surface-space-charge fields

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1993

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Pfeifer, Torsten
Kütt, Waldemar
Kurz, Heinrich

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Physical Review B. 1993, 47(7), pp. 3842-3849. Available under: doi: 10.1103/PhysRevB.47.3842

Zusammenfassung

Above-band-gap pulsed optical excitation of electron-hole pairs within the surface-space-charge region of semiconductors alters the surface-space-charge field via free-carrier transport. We report on the direct observation of this ultrafast transient screening and the associated charge-carrier transport by applying reflective electro-optic sampling (REOS) with subpicosecond time resolution to (100)-oriented GaAs surfaces. The REOS measurements performed under different initial surface field conditions and various optical excitation densities are compared to numerical simulations of hot-carrier transport, including the calculation of the optical response. The simulations, which are based on a simple drift-diffusion model for optically excited electron-hole pairs, are in quantitative agreement with the experiment. The strength and sign of the static built-in field can be determined and the carrier drift velocities can be derived on a subpicosecond time scale.

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530 Physik

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ISO 690DEKORSY, Thomas, Torsten PFEIFER, Waldemar KÜTT, Heinrich KURZ, 1993. Subpicosecond carrier transport in GaAs surface-space-charge fields. In: Physical Review B. 1993, 47(7), pp. 3842-3849. Available under: doi: 10.1103/PhysRevB.47.3842
BibTex
@article{Dekorsy1993Subpi-5299,
  year={1993},
  doi={10.1103/PhysRevB.47.3842},
  title={Subpicosecond carrier transport in GaAs surface-space-charge fields},
  number={7},
  volume={47},
  journal={Physical Review B},
  pages={3842--3849},
  author={Dekorsy, Thomas and Pfeifer, Torsten and Kütt, Waldemar and Kurz, Heinrich}
}
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