Publikation: Subpicosecond carrier transport in GaAs surface-space-charge fields
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Above-band-gap pulsed optical excitation of electron-hole pairs within the surface-space-charge region of semiconductors alters the surface-space-charge field via free-carrier transport. We report on the direct observation of this ultrafast transient screening and the associated charge-carrier transport by applying reflective electro-optic sampling (REOS) with subpicosecond time resolution to (100)-oriented GaAs surfaces. The REOS measurements performed under different initial surface field conditions and various optical excitation densities are compared to numerical simulations of hot-carrier transport, including the calculation of the optical response. The simulations, which are based on a simple drift-diffusion model for optically excited electron-hole pairs, are in quantitative agreement with the experiment. The strength and sign of the static built-in field can be determined and the carrier drift velocities can be derived on a subpicosecond time scale.
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DEKORSY, Thomas, Torsten PFEIFER, Waldemar KÜTT, Heinrich KURZ, 1993. Subpicosecond carrier transport in GaAs surface-space-charge fields. In: Physical Review B. 1993, 47(7), pp. 3842-3849. Available under: doi: 10.1103/PhysRevB.47.3842BibTex
@article{Dekorsy1993Subpi-5299, year={1993}, doi={10.1103/PhysRevB.47.3842}, title={Subpicosecond carrier transport in GaAs surface-space-charge fields}, number={7}, volume={47}, journal={Physical Review B}, pages={3842--3849}, author={Dekorsy, Thomas and Pfeifer, Torsten and Kütt, Waldemar and Kurz, Heinrich} }
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