Publikation: Strain-enabled control of the vanadium qudit in silicon carbide
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2025
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Physical Review Materials. American Physical Society (APS). 2025, 9(4), L043201. eISSN 2475-9953. Verfügbar unter: doi: 10.1103/physrevmaterials.9.l043201
Zusammenfassung
Vanadium in silicon carbide is a promising spin photon interface candidate with optical transitions in the telecom range and a long lived electron spin, hosted in an advanced semiconductor platform. In this detailed investigation of the defect's 16-dimensional ground state spin manifold at millikelvin temperatures, a wide range of previously unreported transitions are observed which are accurately described using a theoretical model that includes strain. Using a superconducting microcoil we achieve Rabi frequencies exceeding 20MHz and perform the first coherent manipulation of a direct hyperfine transition. These insights further underscore the defect's potential for strain engineering and sensing, as well as for fault-tolerant qudit encoding.
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KOLLER, Philipp, Thomas ASTNER, Benedikt TISSOT, Guido BURKARD, Michael TRUPKE, 2025. Strain-enabled control of the vanadium qudit in silicon carbide. In: Physical Review Materials. American Physical Society (APS). 2025, 9(4), L043201. eISSN 2475-9953. Verfügbar unter: doi: 10.1103/physrevmaterials.9.l043201BibTex
@article{Koller2025-04-24Strai-73245,
title={Strain-enabled control of the vanadium qudit in silicon carbide},
year={2025},
doi={10.1103/physrevmaterials.9.l043201},
number={4},
volume={9},
journal={Physical Review Materials},
author={Koller, Philipp and Astner, Thomas and Tissot, Benedikt and Burkard, Guido and Trupke, Michael},
note={Article Number: L043201}
}RDF
<rdf:RDF
xmlns:dcterms="http://purl.org/dc/terms/"
xmlns:dc="http://purl.org/dc/elements/1.1/"
xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
xmlns:bibo="http://purl.org/ontology/bibo/"
xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
xmlns:foaf="http://xmlns.com/foaf/0.1/"
xmlns:void="http://rdfs.org/ns/void#"
xmlns:xsd="http://www.w3.org/2001/XMLSchema#" >
<rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/73245">
<dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2025-05-07T10:56:35Z</dc:date>
<dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2025-05-07T10:56:35Z</dcterms:available>
<dc:creator>Trupke, Michael</dc:creator>
<dc:contributor>Burkard, Guido</dc:contributor>
<dcterms:title>Strain-enabled control of the vanadium qudit in silicon carbide</dcterms:title>
<bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/73245"/>
<dcterms:rights rdf:resource="http://creativecommons.org/licenses/by/4.0/"/>
<dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<dc:creator>Burkard, Guido</dc:creator>
<dc:rights>Attribution 4.0 International</dc:rights>
<dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/73245/1/Koller_2-1p2cke9ybckxk1.pdf"/>
<dc:creator>Koller, Philipp</dc:creator>
<dc:contributor>Koller, Philipp</dc:contributor>
<dc:contributor>Trupke, Michael</dc:contributor>
<foaf:homepage rdf:resource="http://localhost:8080/"/>
<dc:contributor>Tissot, Benedikt</dc:contributor>
<dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<dc:creator>Tissot, Benedikt</dc:creator>
<dc:creator>Astner, Thomas</dc:creator>
<dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/73245/1/Koller_2-1p2cke9ybckxk1.pdf"/>
<dc:language>eng</dc:language>
<dcterms:issued>2025-04-24</dcterms:issued>
<dcterms:abstract>Vanadium in silicon carbide is a promising spin photon interface candidate with optical transitions in the telecom range and a long lived electron spin, hosted in an advanced semiconductor platform. In this detailed investigation of the defect's 16-dimensional ground state spin manifold at millikelvin temperatures, a wide range of previously unreported transitions are observed which are accurately described using a theoretical model that includes strain. Using a superconducting microcoil we achieve Rabi frequencies exceeding 20MHz and perform the first coherent manipulation of a direct hyperfine transition. These insights further underscore the defect's potential for strain engineering and sensing, as well as for fault-tolerant qudit encoding.</dcterms:abstract>
<void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
<dc:contributor>Astner, Thomas</dc:contributor>
</rdf:Description>
</rdf:RDF>Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
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