Publikation:

Annealing effects on SiOxNy thin films : Optical and morphological properties

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Datum

2016

Autor:innen

Perani, Martina
Fazio, Maria Antonietta
Hammud, A.
Cavalcoli, Daniela

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http://nbn-resolving.de/urn:nbn:de:bsz:352-2-1pbxtu3vhdcy31
DOI (zitierfähiger Link)
https://doi.org/10.1016/j.tsf.2016.03.067
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Physik: Publikationen
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Thin Solid Films. 2016, 617, pp. 133-137. ISSN 0040-6090. eISSN 1879-2731. Available under: doi: 10.1016/j.tsf.2016.03.067

Zusammenfassung

The annealing effect on the properties of silicon oxynitride (SiOxNy) thin films has been investigated. The present contribution aims to study the structural and optical properties of SiOxNy thin films deposited by plasma enhanced chemical vapor deposition in view of their application in the field of photovoltaics. Evolution of the surface morphology and increase of the optical band gap with the thermal treatment have been determined and discussed in view of the application of the film as an emitter layer in heterojunction solar cells.

Zusammenfassung in einer weiteren Sprache

Fachgebiet (DDC)
530 Physik

Schlagwörter

Silicon oxy-nitride; Atomic force microscopy; Tauc gap; Optical properties; Height–height correlation function; Image segmentation

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ISO 690PERANI, Martina, Nils H. BRINKMANN, Maria Antonietta FAZIO, A. HAMMUD, Barbara TERHEIDEN, Daniela CAVALCOLI, 2016. Annealing effects on SiOxNy thin films : Optical and morphological properties. In: Thin Solid Films. 2016, 617, pp. 133-137. ISSN 0040-6090. eISSN 1879-2731. Available under: doi: 10.1016/j.tsf.2016.03.067
BibTex
@article{Perani2016Annea-37789,
  year={2016},
  doi={10.1016/j.tsf.2016.03.067},
  title={Annealing effects on SiOxNy thin films : Optical and morphological properties},
  volume={617},
  issn={0040-6090},
  journal={Thin Solid Films},
  pages={133--137},
  author={Perani, Martina and Brinkmann, Nils H. and Fazio, Maria Antonietta and Hammud, A. and Terheiden, Barbara and Cavalcoli, Daniela}
}
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