Laser cooling of semiconductors traced in the time domain
Laser cooling of semiconductors traced in the time domain
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2019
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CLEO: QELS_Fundamental Science : part of CLEO: 2019 : 5-10 May 2019, San Jose, California, United States. - Washington, D.C. : OSA, 2019. - FW4M.3. - ISSN 2160-8989. - ISBN 978-1-943580-57-6
Abstract
Despite tremendous progress in optical refrigeration of rare-earth-doped crystals, laser cooling in III-V semiconductors has not been demonstrated to date. Here we report first observation of cooling in GaAs/lnGaP double heterostructures on a sub-nanosecond timescale.
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530 Physics
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CLEO : QELS_Fundamental Science, May 5, 2019 - May 10, 2019, San Jose, California, United States
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SCHMIDT, Jan, Alfred LEITENSTORFER, Denis V. SELETSKIY, 2019. Laser cooling of semiconductors traced in the time domain. CLEO : QELS_Fundamental Science. San Jose, California, United States, May 5, 2019 - May 10, 2019. In: CLEO: QELS_Fundamental Science : part of CLEO: 2019 : 5-10 May 2019, San Jose, California, United States. Washington, D.C.:OSA, FW4M.3. ISSN 2160-8989. ISBN 978-1-943580-57-6. Available under: doi: 10.1364/CLEO_QELS.2019.FW4M.3BibTex
@inproceedings{Schmidt2019Laser-47001, year={2019}, doi={10.1364/CLEO_QELS.2019.FW4M.3}, title={Laser cooling of semiconductors traced in the time domain}, isbn={978-1-943580-57-6}, issn={2160-8989}, publisher={OSA}, address={Washington, D.C.}, booktitle={CLEO: QELS_Fundamental Science : part of CLEO: 2019 : 5-10 May 2019, San Jose, California, United States}, author={Schmidt, Jan and Leitenstorfer, Alfred and Seletskiy, Denis V.}, note={Article Number: FW4M.3} }
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