Publikation: Understanding coupled oxide growth and phosphorus diffusion in POCl3 deposition for control of phosphorus emitter diffusion
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Datum
2012
Autor:innen
Chen, Renyu
Wagner, Hannes
Kessler, Michael
Zhu, Zihua
Altermatt, Pietro P.
Dunham, Scott T.
Herausgeber:innen
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2012 38th IEEE Photovoltaic Specialists Conference. IEEE, 2012, pp. 000213-000216. ISBN 978-1-4673-0064-3. Available under: doi: 10.1109/PVSC.2012.6317603
Zusammenfassung
Effective control of diffused phosphorus profiles in crystalline silicon requires detailed understanding of the doping process. We analyze concentration profiles within the deposited phosphosilicate glass (PSG) for a range of POCl3 conditions and develop a model to account for the experimentally observed time dependence of PSG thickness and dose of phosphorus in Si. A simple linear-parabolic model cannot fully explain the kinetics of thickness and dose; while an improved growth model including oxygen dependence and dose saturation gives better fits to the experiments. We further couple the growth model with phosphorus diffusion and deactivation models in silicon and provide full modeling of the POCl3 doping process.
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Fachgebiet (DDC)
530 Physik
Schlagwörter
phosphorus emitter diffusion, phosphosilicate glass, POCl3 deposition, process modeling
Konferenz
2012 IEEE 38th Photovoltaic Specialists Conference (PVSC), 3. Juni 2012 - 8. Juni 2012, Austin, Texas
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CHEN, Renyu, Hannes WAGNER, Amir DASTGHEIB-SHIRAZI, Michael KESSLER, Zihua ZHU, Pietro P. ALTERMATT, Scott T. DUNHAM, 2012. Understanding coupled oxide growth and phosphorus diffusion in POCl3 deposition for control of phosphorus emitter diffusion. 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC). Austin, Texas, 3. Juni 2012 - 8. Juni 2012. In: 2012 38th IEEE Photovoltaic Specialists Conference. IEEE, 2012, pp. 000213-000216. ISBN 978-1-4673-0064-3. Available under: doi: 10.1109/PVSC.2012.6317603BibTex
@inproceedings{Chen2012Under-50021,
year={2012},
doi={10.1109/PVSC.2012.6317603},
title={Understanding coupled oxide growth and phosphorus diffusion in POCl3 deposition for control of phosphorus emitter diffusion},
isbn={978-1-4673-0064-3},
publisher={IEEE},
booktitle={2012 38th IEEE Photovoltaic Specialists Conference},
pages={000213--000216},
author={Chen, Renyu and Wagner, Hannes and Dastgheib-Shirazi, Amir and Kessler, Michael and Zhu, Zihua and Altermatt, Pietro P. and Dunham, Scott T.}
}RDF
<rdf:RDF
xmlns:dcterms="http://purl.org/dc/terms/"
xmlns:dc="http://purl.org/dc/elements/1.1/"
xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
xmlns:bibo="http://purl.org/ontology/bibo/"
xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
xmlns:foaf="http://xmlns.com/foaf/0.1/"
xmlns:void="http://rdfs.org/ns/void#"
xmlns:xsd="http://www.w3.org/2001/XMLSchema#" >
<rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/50021">
<dc:contributor>Dunham, Scott T.</dc:contributor>
<dc:contributor>Dastgheib-Shirazi, Amir</dc:contributor>
<dc:creator>Zhu, Zihua</dc:creator>
<dc:contributor>Wagner, Hannes</dc:contributor>
<dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<dcterms:title>Understanding coupled oxide growth and phosphorus diffusion in POCl3 deposition for control of phosphorus emitter diffusion</dcterms:title>
<dc:creator>Chen, Renyu</dc:creator>
<dc:creator>Wagner, Hannes</dc:creator>
<dc:language>eng</dc:language>
<bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/50021"/>
<dc:contributor>Zhu, Zihua</dc:contributor>
<dc:creator>Dunham, Scott T.</dc:creator>
<dcterms:issued>2012</dcterms:issued>
<void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
<dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2020-06-25T12:46:54Z</dcterms:available>
<dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2020-06-25T12:46:54Z</dc:date>
<dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<dc:creator>Altermatt, Pietro P.</dc:creator>
<dc:creator>Dastgheib-Shirazi, Amir</dc:creator>
<dc:creator>Kessler, Michael</dc:creator>
<dc:contributor>Chen, Renyu</dc:contributor>
<foaf:homepage rdf:resource="http://localhost:8080/"/>
<dc:contributor>Kessler, Michael</dc:contributor>
<dcterms:abstract xml:lang="eng">Effective control of diffused phosphorus profiles in crystalline silicon requires detailed understanding of the doping process. We analyze concentration profiles within the deposited phosphosilicate glass (PSG) for a range of POCl<sub>3</sub> conditions and develop a model to account for the experimentally observed time dependence of PSG thickness and dose of phosphorus in Si. A simple linear-parabolic model cannot fully explain the kinetics of thickness and dose; while an improved growth model including oxygen dependence and dose saturation gives better fits to the experiments. We further couple the growth model with phosphorus diffusion and deactivation models in silicon and provide full modeling of the POCl<sub>3</sub> doping process.</dcterms:abstract>
<dc:contributor>Altermatt, Pietro P.</dc:contributor>
</rdf:Description>
</rdf:RDF>Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
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