Publikation: A Discrete BGK Approximation of Hydrodynamic Equations for Semiconductors
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2001
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Jüngel, Ansgar
Tang, Shaoqiang
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In this paper, we shall study numerically the hydrodynamic model for semiconductor devices, particularly in a one-dimensional n+-n-n+ diode. By using a relaxed discrete BGK scheme, we explore the effects of various parameters, such as the low field mobility, device length, and lattice temperature. The effect of different type of boundary conditions is discussed. We also establish numerically the asymptotic limits of the hydrodynamic model towards the energy-transport and drift-diffusion models. This verifies the theoretical results in the literature.
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JÜNGEL, Ansgar, Shaoqiang TANG, 2001. A Discrete BGK Approximation of Hydrodynamic Equations for SemiconductorsBibTex
@unpublished{Jungel2001Discr-6149,
year={2001},
title={A Discrete BGK Approximation of Hydrodynamic Equations for Semiconductors},
author={Jüngel, Ansgar and Tang, Shaoqiang}
}RDF
<rdf:RDF
xmlns:dcterms="http://purl.org/dc/terms/"
xmlns:dc="http://purl.org/dc/elements/1.1/"
xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
xmlns:bibo="http://purl.org/ontology/bibo/"
xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
xmlns:foaf="http://xmlns.com/foaf/0.1/"
xmlns:void="http://rdfs.org/ns/void#"
xmlns:xsd="http://www.w3.org/2001/XMLSchema#" >
<rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/6149">
<dcterms:issued>2001</dcterms:issued>
<dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/6149/1/preprint_137.pdf"/>
<dcterms:title>A Discrete BGK Approximation of Hydrodynamic Equations for Semiconductors</dcterms:title>
<bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/6149"/>
<dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T16:09:49Z</dcterms:available>
<dc:creator>Tang, Shaoqiang</dc:creator>
<dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T16:09:49Z</dc:date>
<dc:language>eng</dc:language>
<dc:creator>Jüngel, Ansgar</dc:creator>
<dc:rights>terms-of-use</dc:rights>
<dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/36"/>
<void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
<dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
<dcterms:abstract xml:lang="eng">In this paper, we shall study numerically the hydrodynamic model for semiconductor devices, particularly in a one-dimensional n+-n-n+ diode. By using a relaxed discrete BGK scheme, we explore the effects of various parameters, such as the low field mobility, device length, and lattice temperature. The effect of different type of boundary conditions is discussed. We also establish numerically the asymptotic limits of the hydrodynamic model towards the energy-transport and drift-diffusion models. This verifies the theoretical results in the literature.</dcterms:abstract>
<dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/36"/>
<dc:contributor>Tang, Shaoqiang</dc:contributor>
<dc:format>application/pdf</dc:format>
<dc:contributor>Jüngel, Ansgar</dc:contributor>
<foaf:homepage rdf:resource="http://localhost:8080/"/>
<dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/6149/1/preprint_137.pdf"/>
</rdf:Description>
</rdf:RDF>
