Publikation: Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal oxide semiconductor device
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2004
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Applied Physics Letters. 2004, 85(16), pp. 3387-3389. Available under: doi: 10.1063/1.1808488
Zusammenfassung
Strong ultraviolet electroluminescence with an external quantum efficiency above 1% is observed from an indium-tin oxide/SiO2:Gd/Si metal oxide semiconductor structure. The SiO2:Gd active layer is prepared by thermal oxidation followed by Gd+ implantation and annealing. The electroluminescence spectra show a sharp peak at 316 nm from the 6P 7/2 to 8S 7/2 transition of Gd3+ ions. Micrometer-sized electroluminescent devices are demonstrated.
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SUN, Jiaming, Wolfgang SKORUPA, Thomas DEKORSY, Manfred HELM, Lars REBOHLE, Thoralf GEBEL, 2004. Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal oxide semiconductor device. In: Applied Physics Letters. 2004, 85(16), pp. 3387-3389. Available under: doi: 10.1063/1.1808488BibTex
@article{Sun2004Effic-4833, year={2004}, doi={10.1063/1.1808488}, title={Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal oxide semiconductor device}, number={16}, volume={85}, journal={Applied Physics Letters}, pages={3387--3389}, author={Sun, Jiaming and Skorupa, Wolfgang and Dekorsy, Thomas and Helm, Manfred and Rebohle, Lars and Gebel, Thoralf} }
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