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Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon

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2018

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http://nbn-resolving.de/urn:nbn:de:bsz:352-2-1s0pdjkx0q21d2
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https://doi.org/10.1063/1.5047084
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CC BY 4.0

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AIP Advances. 2018, 8(8), 085219. eISSN 2158-3226. Available under: doi: 10.1063/1.5047084

Zusammenfassung

Boron-oxygen related light-induced degradation (BO-LID) of effective charge carrier lifetime is one of the major problems for photovoltaics based on oxygen-rich boron-doped wafer substrates. Within this contribution, the dependence of slow BO-related degradation rate on total hole concentration at 30°C is investigated. A widened high power 805 nm IR-laser is used to reach injection levels comparable with the doping level of the used 2 Ωcm material thus significantly impacting total hole concentration. It is found that slow BO-related degradation rate scales almost quadratically with total hole concentration in best agreement with results from other groups suggesting the involvement of two holes in the slow BO-related degradation mechanism.

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ISO 690GRAF, Alexander, Axel HERGUTH, Giso HAHN, 2018. Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon. In: AIP Advances. 2018, 8(8), 085219. eISSN 2158-3226. Available under: doi: 10.1063/1.5047084
BibTex
@article{Graf2018-08Inves-43358,
  year={2018},
  doi={10.1063/1.5047084},
  title={Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon},
  number={8},
  volume={8},
  journal={AIP Advances},
  author={Graf, Alexander and Herguth, Axel and Hahn, Giso},
  note={Article Number: 085219}
}
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