Publikation:

Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs

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Energy_resolved_ultrafast_relaxation_dynamics_close_to_the_band_edge_of_low_temperature_grown_GaAs.pdf
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1997

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Segschneider, Gregor
Kurz, Heinrich
Hey, Rudolf
Ploog, Klaus

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http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-44804
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https://doi.org/10.1063/1.120131
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Attribution-NonCommercial-NoDerivs 2.0 Generic

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Applied Physics Letters. 1997, 71(19), pp. 2779-2781. Available under: doi: 10.1063/1.120131

Zusammenfassung

We investigate the relaxation dynamics of photogenerated carriers in low-temperature grown GaAs by femtosecond pump-probe measurements. The carrier dynamics in the vicinity of the band edge is disentangled in a two-color technique. The filling of shallow bound states close beneath the band edge is resolved. A temporal delay in the occupation of these states as well as a large optical nonlinearity points towards microscopic potential fluctuations forming these states.

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530 Physik

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ISO 690SEGSCHNEIDER, Gregor, Thomas DEKORSY, Heinrich KURZ, Rudolf HEY, Klaus PLOOG, 1997. Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs. In: Applied Physics Letters. 1997, 71(19), pp. 2779-2781. Available under: doi: 10.1063/1.120131
BibTex
@article{Segschneider1997Energ-4820,
  year={1997},
  doi={10.1063/1.120131},
  title={Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs},
  number={19},
  volume={71},
  journal={Applied Physics Letters},
  pages={2779--2781},
  author={Segschneider, Gregor and Dekorsy, Thomas and Kurz, Heinrich and Hey, Rudolf and Ploog, Klaus}
}
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