Publikation: Highly Bi-doped Cu thin films with large spin-mixing conductance
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2018
Autor:innen
Ruiz-Gómez, Sandra
Serrano, Aída
Guerrero, Rubén
Muñoz, Manuel
Lucas, Irene
Foerster, Michael
Aballe, Lucia
Marco, José F.
Amado, Mario
et al.
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APL Materials. American Institute of Physics. 2018, 6(10), 101107. eISSN 2166-532X. Available under: doi: 10.1063/1.5049944
Zusammenfassung
The spin Hall effect (SHE) provides an efficient tool for the production of pure spin currents, essentially for the next generation of spintronics devices. Giant SHE has been reported in Cu doped with 0.5% Bi grown by sputtering, and larger values are predicted for larger Bi doping. In this work, we demonstrate the possibility of doping Cu with up to 10% of Bi atoms without evidence of Bi surface segregation or cluster formation. In addition, YIG/BiCu structures have been grown, showing a spin mixing conductance larger that the one shown by similar Pt/YIG structures, reflecting the potentiality of these new materials.
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RUIZ-GÓMEZ, Sandra, Aída SERRANO, Rubén GUERRERO, Manuel MUÑOZ, Irene LUCAS, Michael FOERSTER, Lucia ABALLE, José F. MARCO, Mario AMADO, Angelo DI BERNARDO, 2018. Highly Bi-doped Cu thin films with large spin-mixing conductance. In: APL Materials. American Institute of Physics. 2018, 6(10), 101107. eISSN 2166-532X. Available under: doi: 10.1063/1.5049944BibTex
@article{RuizGomez2018Highl-48375,
year={2018},
doi={10.1063/1.5049944},
title={Highly Bi-doped Cu thin films with large spin-mixing conductance},
number={10},
volume={6},
journal={APL Materials},
author={Ruiz-Gómez, Sandra and Serrano, Aída and Guerrero, Rubén and Muñoz, Manuel and Lucas, Irene and Foerster, Michael and Aballe, Lucia and Marco, José F. and Amado, Mario and Di Bernardo, Angelo},
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<dcterms:abstract xml:lang="eng">The spin Hall effect (SHE) provides an efficient tool for the production of pure spin currents, essentially for the next generation of spintronics devices. Giant SHE has been reported in Cu doped with 0.5% Bi grown by sputtering, and larger values are predicted for larger Bi doping. In this work, we demonstrate the possibility of doping Cu with up to 10% of Bi atoms without evidence of Bi surface segregation or cluster formation. In addition, YIG/BiCu structures have been grown, showing a spin mixing conductance larger that the one shown by similar Pt/YIG structures, reflecting the potentiality of these new materials.</dcterms:abstract>
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