Publikation: Quantitative analysis of free-electron dynamics in InSb by terahertz shockwave spectroscopy
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The contribution of free electrons to the dielectric function is largely determined by their plasmonic resonance, a collective density oscillation. We studied this broadband and carrier-density-dependent response in the narrow-gap semiconductor InSb with THz shockwave spectroscopy. A synthesized waveform, with a steep onset followed by a short electric-field plateau, gives access to a multioctave spectrum of frequencies from 100 GHz up to the mid infrared. By measuring the entire spectral characteristics of the plasma, we analyze the dynamics of photogenerated free electrons for a wide range of excitation fluences. Thanks to this analysis, we were able to quantify the coefficients of both electron trapping and the Auger process from cryogenic to room temperature.
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FISCHER, Peter, Gabriel FITZKY, Davide BOSSINI, Alfred LEITENSTORFER, Ron TENNE, 2022. Quantitative analysis of free-electron dynamics in InSb by terahertz shockwave spectroscopy. In: Physical Review B. American Physical Society (APS). 2022, 106(20), 205201. ISSN 2469-9950. eISSN 2469-9969. Verfügbar unter: doi: 10.1103/PhysRevB.106.205201BibTex
@article{Fischer2022Quant-59759, year={2022}, doi={10.1103/PhysRevB.106.205201}, title={Quantitative analysis of free-electron dynamics in InSb by terahertz shockwave spectroscopy}, number={20}, volume={106}, issn={2469-9950}, journal={Physical Review B}, author={Fischer, Peter and Fitzky, Gabriel and Bossini, Davide and Leitenstorfer, Alfred and Tenne, Ron}, note={Article Number: 205201} }
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