@article{Fischer2022Quant-59759,
  year={2022},
  doi={10.1103/PhysRevB.106.205201},
  title={Quantitative analysis of free-electron dynamics in InSb by terahertz shockwave spectroscopy},
  number={20},
  volume={106},
  issn={2469-9950},
  journal={Physical Review B},
  author={Fischer, Peter and Fitzky, Gabriel and Bossini, Davide and Leitenstorfer, Alfred and Tenne, Ron},
  note={Article Number: 205201}
}

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    <dc:contributor>Bossini, Davide</dc:contributor>
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    <dc:creator>Tenne, Ron</dc:creator>
    <dc:contributor>Tenne, Ron</dc:contributor>
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    <dcterms:abstract xml:lang="eng">The contribution of free electrons to the dielectric function is largely determined by their plasmonic resonance, a collective density oscillation. We studied this broadband and carrier-density-dependent response in the narrow-gap semiconductor InSb with THz shockwave spectroscopy. A synthesized waveform, with a steep onset followed by a short electric-field plateau, gives access to a multioctave spectrum of frequencies from 100 GHz up to the mid infrared. By measuring the entire spectral characteristics of the plasma, we analyze the dynamics of photogenerated free electrons for a wide range of excitation fluences. Thanks to this analysis, we were able to quantify the coefficients of both electron trapping and the Auger process from cryogenic to room temperature.</dcterms:abstract>
    <dc:contributor>Fischer, Peter</dc:contributor>
    <dc:creator>Bossini, Davide</dc:creator>
    <dc:contributor>Leitenstorfer, Alfred</dc:contributor>
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