Publikation: Quantitative analysis of free-electron dynamics in InSb by terahertz shockwave spectroscopy
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2022
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Physical Review B. American Physical Society (APS). 2022, 106(20), 205201. ISSN 2469-9950. eISSN 2469-9969. Verfügbar unter: doi: 10.1103/PhysRevB.106.205201
Zusammenfassung
The contribution of free electrons to the dielectric function is largely determined by their plasmonic resonance, a collective density oscillation. We studied this broadband and carrier-density-dependent response in the narrow-gap semiconductor InSb with THz shockwave spectroscopy. A synthesized waveform, with a steep onset followed by a short electric-field plateau, gives access to a multioctave spectrum of frequencies from 100 GHz up to the mid infrared. By measuring the entire spectral characteristics of the plasma, we analyze the dynamics of photogenerated free electrons for a wide range of excitation fluences. Thanks to this analysis, we were able to quantify the coefficients of both electron trapping and the Auger process from cryogenic to room temperature.
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FISCHER, Peter, Gabriel FITZKY, Davide BOSSINI, Alfred LEITENSTORFER, Ron TENNE, 2022. Quantitative analysis of free-electron dynamics in InSb by terahertz shockwave spectroscopy. In: Physical Review B. American Physical Society (APS). 2022, 106(20), 205201. ISSN 2469-9950. eISSN 2469-9969. Verfügbar unter: doi: 10.1103/PhysRevB.106.205201BibTex
@article{Fischer2022Quant-59759,
title={Quantitative analysis of free-electron dynamics in InSb by terahertz shockwave spectroscopy},
year={2022},
doi={10.1103/PhysRevB.106.205201},
number={20},
volume={106},
issn={2469-9950},
journal={Physical Review B},
author={Fischer, Peter and Fitzky, Gabriel and Bossini, Davide and Leitenstorfer, Alfred and Tenne, Ron},
note={Article Number: 205201}
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<dcterms:abstract xml:lang="eng">The contribution of free electrons to the dielectric function is largely determined by their plasmonic resonance, a collective density oscillation. We studied this broadband and carrier-density-dependent response in the narrow-gap semiconductor InSb with THz shockwave spectroscopy. A synthesized waveform, with a steep onset followed by a short electric-field plateau, gives access to a multioctave spectrum of frequencies from 100 GHz up to the mid infrared. By measuring the entire spectral characteristics of the plasma, we analyze the dynamics of photogenerated free electrons for a wide range of excitation fluences. Thanks to this analysis, we were able to quantify the coefficients of both electron trapping and the Auger process from cryogenic to room temperature.</dcterms:abstract>
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