Ferromagnetism in epitaxial Zn_0.95Co_0.05O films grown on ZnO and Al₂O₃

Abstract

In this article, the possible mechanisms resulting in strong ferromagnetic coupling in transition metal(TM)‐doped ZnO and other diluted magnetic semiconductors (DMS) are reviewed and the prerequisites for the observation of room temperature ferromagnetism in TM‐doped ZnO are defined. In order to study the ferromagnetic behavior we have grown epitaxial Zn0.95Co0.05O films simultaneously on (0001) ZnO and Al2O3 substrates by laser molecular beam epitaxy at different deposition temperatures. A systematic study of the structural and magnetic properties has been performed to reveal their interdependence. Room temperature ferromagnetism has been found in Zn0.95Co0.05O films grown on ZnO, whereas for films deposited on sapphire only weak ferromagnetic signals have been detected which could not unambiguously be separated from those of the substrate. The different behavior is explained by different structural properties and defect densities in both films. Our experimental findings are in good agreement with a spin split impurity band model, where strong ferromagnetic exchange in ZnO:Co2+ is obtained by a strong hybridization between the magnetic Co2+ ion states and the donor states due to a large density of native defects.