Publikation: Overcoming phosphorus emitter limitations in PERC Si solar cells by using a gallium-phosphide heteroemitter
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Datum
2013
Autor:innen
Wagner, Hannes
Ohrdes, Tobias
Dastgheib-Shirazi, Amir
Puthen-Veettil, Binesh
König, Dirk
Altermatt, Pietro P.
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2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). Piscataway, NJ: IEEE, 2013, pp. 896-899. ISSN 0160-8371. ISBN 978-1-4799-3299-3. Available under: doi: 10.1109/PVSC.2013.6744288
Zusammenfassung
The performance of PERC Si solar cells is often limited by recombination in the emitter. We use numerical device simulations to evaluate efficiency limits of different types of phosphorus emitters in an example of a realistic PERC cell. The resulting maximum efficiencies are between 20.5% and 21.2%. The same cell simulated with an emitter made of an n-doped crystalline gallium phosphide layer shows an efficiency limit of 21.6%. This hetero-emitter causes much lower recombination losses than a nearly ideal phosphorus emitter, resulting in a higher Voc . In addition a lower base doping is necessary which, in turn, reduces the impact of the boron-oxygen complex.
Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
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device simulation, gallium phosphide, phosphorus emitter, silicon
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2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 16. Juni 2013 - 21. Juni 2013, Tampa, Florida
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WAGNER, Hannes, Tobias OHRDES, Amir DASTGHEIB-SHIRAZI, Binesh PUTHEN-VEETTIL, Dirk KÖNIG, Pietro P. ALTERMATT, 2013. Overcoming phosphorus emitter limitations in PERC Si solar cells by using a gallium-phosphide heteroemitter. 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). Tampa, Florida, 16. Juni 2013 - 21. Juni 2013. In: 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). Piscataway, NJ: IEEE, 2013, pp. 896-899. ISSN 0160-8371. ISBN 978-1-4799-3299-3. Available under: doi: 10.1109/PVSC.2013.6744288BibTex
@inproceedings{Wagner2013Overc-42928,
year={2013},
doi={10.1109/PVSC.2013.6744288},
title={Overcoming phosphorus emitter limitations in PERC Si solar cells by using a gallium-phosphide heteroemitter},
isbn={978-1-4799-3299-3},
issn={0160-8371},
publisher={IEEE},
address={Piscataway, NJ},
booktitle={2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)},
pages={896--899},
author={Wagner, Hannes and Ohrdes, Tobias and Dastgheib-Shirazi, Amir and Puthen-Veettil, Binesh and König, Dirk and Altermatt, Pietro P.}
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<dcterms:abstract xml:lang="eng">The performance of PERC Si solar cells is often limited by recombination in the emitter. We use numerical device simulations to evaluate efficiency limits of different types of phosphorus emitters in an example of a realistic PERC cell. The resulting maximum efficiencies are between 20.5% and 21.2%. The same cell simulated with an emitter made of an n-doped crystalline gallium phosphide layer shows an efficiency limit of 21.6%. This hetero-emitter causes much lower recombination losses than a nearly ideal phosphorus emitter, resulting in a higher V<sub>oc</sub> . In addition a lower base doping is necessary which, in turn, reduces the impact of the boron-oxygen complex.</dcterms:abstract>
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