Publikation:

Boron emitters from doped PECVD layers for n-type crystalline silicon solar cells with LCO

Vorschaubild

Dateien

Engelhardt_0-281433.pdf
Engelhardt_0-281433.pdfGröße: 397.41 KBDownloads: 581

Datum

2014

Autor:innen

Frey, Alexander
Mahlstaedt, Lisa

Herausgeber:innen

Kontakt

ISSN der Zeitschrift

Electronic ISSN

ISBN

Bibliografische Daten

Verlag

Schriftenreihe

Auflagebezeichnung

URI (zitierfähiger Link)
http://nbn-resolving.de/urn:nbn:de:bsz:352-0-281433
DOI (zitierfähiger Link)
https://doi.org/10.1016/j.egypro.2014.08.050
ArXiv-ID

Internationale Patentnummer

Link zur Lizenz
Attribution-NonCommercial-NoDerivs 3.0 Unported

Angaben zur Forschungsförderung

Projekt

Open Access-Veröffentlichung
Open Access Gold

Sammlungen

Physik: Publikationen
Core Facility der Universität Konstanz

Gesperrt bis

Titel in einer weiteren Sprache

Publikationstyp
Zeitschriftenartikel
Publikationsstatus
Published

Erschienen in

Energy Procedia. 2014, 55, pp. 235-240. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2014.08.050

Zusammenfassung

The intensified research into n-type silicon solar cells over the last few years let the application of boron doped emitters in suitable cell concepts become the preferred method to form the necessary p-n-junction. In this study an alternative process to fabricate a boron doped emitter via diffusion from a PECV-deposited doping source is presented and optimized for n-type crystalline silicon solar cell concepts. Doping profiles with a high surface concentration in combination with low emitter saturation current density values are achieved for improved contact and passivation characteristics. The boron emitter profile is compatible with various contacting techniques i.e. screen printing and vapour deposited Al, allowing for low-resistant contacting with Ag/Al pastes or sputtered Al. The comparably low emitter saturation current density j0E of 44 fA/cm2 allows for a VOC of 666 mV, and thereby a cell efficiency of 19.7% is demonstrated on a large area (156.25 cm2) solar cell.

Zusammenfassung in einer weiteren Sprache

Fachgebiet (DDC)
530 Physik

Schlagwörter

PECVD; boron; LCO; ablation; co-diffusion; n-type

Konferenz

Rezension
undefined / . - undefined, undefined

Forschungsvorhaben

Organisationseinheiten

Zeitschriftenheft

Zugehörige Datensätze in KOPS

Zitieren

ISO 690ENGELHARDT, Josh, Alexander FREY, Lisa MAHLSTAEDT, Sebastian GLOGER, Giso HAHN, Barbara TERHEIDEN, 2014. Boron emitters from doped PECVD layers for n-type crystalline silicon solar cells with LCO. In: Energy Procedia. 2014, 55, pp. 235-240. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2014.08.050
BibTex
@article{Engelhardt2014Boron-30557,
  year={2014},
  doi={10.1016/j.egypro.2014.08.050},
  title={Boron emitters from doped PECVD layers for n-type crystalline silicon solar cells with LCO},
  volume={55},
  journal={Energy Procedia},
  pages={235--240},
  author={Engelhardt, Josh and Frey, Alexander and Mahlstaedt, Lisa and Gloger, Sebastian and Hahn, Giso and Terheiden, Barbara}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/30557">
    <dc:contributor>Gloger, Sebastian</dc:contributor>
    <dcterms:abstract xml:lang="eng">The intensified research into n-type silicon solar cells over the last few years let the application of boron doped emitters in suitable cell concepts become the preferred method to form the necessary p-n-junction. In this study an alternative process to fabricate a boron doped emitter via diffusion from a PECV-deposited doping source is presented and optimized for n-type crystalline silicon solar cell concepts. Doping profiles with a high surface concentration in combination with low emitter saturation current density values are achieved for improved contact and passivation characteristics. The boron emitter profile is compatible with various contacting techniques i.e. screen printing and vapour deposited Al, allowing for low-resistant contacting with Ag/Al pastes or sputtered Al. The comparably low emitter saturation current density j0E of 44 fA/cm&lt;sup&gt;2&lt;/sup&gt; allows for a VOC of 666 mV, and thereby a cell efficiency of 19.7% is demonstrated on a large area (156.25 cm&lt;sup&gt;2&lt;/sup&gt;) solar cell.</dcterms:abstract>
    <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/3.0/"/>
    <dcterms:title>Boron emitters from doped PECVD layers for n-type crystalline silicon solar cells with LCO</dcterms:title>
    <dc:language>eng</dc:language>
    <dc:creator>Frey, Alexander</dc:creator>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/30557"/>
    <dc:creator>Gloger, Sebastian</dc:creator>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-03-25T15:21:20Z</dcterms:available>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-03-25T15:21:20Z</dc:date>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:rights>Attribution-NonCommercial-NoDerivs 3.0 Unported</dc:rights>
    <dc:creator>Terheiden, Barbara</dc:creator>
    <dc:contributor>Mahlstaedt, Lisa</dc:contributor>
    <dcterms:issued>2014</dcterms:issued>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Mahlstaedt, Lisa</dc:creator>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:contributor>Engelhardt, Josh</dc:contributor>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/30557/1/Engelhardt_0-281433.pdf"/>
    <dc:creator>Engelhardt, Josh</dc:creator>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/30557/1/Engelhardt_0-281433.pdf"/>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:creator>Hahn, Giso</dc:creator>
    <dc:contributor>Terheiden, Barbara</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:contributor>Frey, Alexander</dc:contributor>
  </rdf:Description>
</rdf:RDF>

Interner Vermerk

xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter

Kontakt
URL der Originalveröffentl.

Prüfdatum der URL

Prüfungsdatum der Dissertation

Finanzierungsart

Kommentar zur Publikation

Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Diese Publikation teilen