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Back contact monocrystalline thin-film silicon solar cells from the porous silicon process

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2009

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Haase, Frerk
Brendel, Rolf

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https://doi.org/10.1109/PVSC.2009.5411686
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IEEE, , ed.. 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009 ; Philadelphia, Pennsylvania, USA, 7 - 12 June 2009. Piscataway, NJ: IEEE, 2009, pp. 244-246. ISSN 0160-8371. ISBN 978-1-4244-2949-3. Available under: doi: 10.1109/PVSC.2009.5411686

Zusammenfassung

We develop a back contact monocrystalline thin-film silicon solar cell using the porous silicon process. Laser processes are applied for all structuring steps. Thus no photolithography or other masking techniques are required. A single evaporation step is used to metallize the cell. Laser scribing is used for contact separation. The cell has a planar front surface, an area of 79.2 cm2 and a cell thickness of 30 ¿m. We reach an efficiency of 13.5 %. The open-circuit voltage is 633 mV and the short-circuit current density is 28.7 mA/cm2.

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530 Physik

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34th IEEE Photovoltaic Specialists Conference, 7. Juni 2009 - 12. Juni 2009, Philadelphia
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ISO 690HAASE, Frerk, Renate HORBELT, Barbara TERHEIDEN, Heiko PLAGWITZ, Rolf BRENDEL, 2009. Back contact monocrystalline thin-film silicon solar cells from the porous silicon process. 34th IEEE Photovoltaic Specialists Conference. Philadelphia, 7. Juni 2009 - 12. Juni 2009. In: IEEE, , ed.. 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009 ; Philadelphia, Pennsylvania, USA, 7 - 12 June 2009. Piscataway, NJ: IEEE, 2009, pp. 244-246. ISSN 0160-8371. ISBN 978-1-4244-2949-3. Available under: doi: 10.1109/PVSC.2009.5411686
BibTex
@inproceedings{Haase2009conta-31897,
  year={2009},
  doi={10.1109/PVSC.2009.5411686},
  title={Back contact monocrystalline thin-film silicon solar cells from the porous silicon process},
  isbn={978-1-4244-2949-3},
  issn={0160-8371},
  publisher={IEEE},
  address={Piscataway, NJ},
  booktitle={34th IEEE Photovoltaic Specialists Conference (PVSC), 2009 ; Philadelphia, Pennsylvania, USA, 7 - 12 June 2009},
  pages={244--246},
  editor={IEEE},
  author={Haase, Frerk and Horbelt, Renate and Terheiden, Barbara and Plagwitz, Heiko and Brendel, Rolf}
}
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