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Extended spin relaxation times of optically addressed vanadium defects in silicon carbide at telecommunication frequencies

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2024

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Ahn, Jonghoon
Wicker, Christina
Bitner, Nolan
Solomon, Michael T.
Tissot, Benedikt
Burkard, Guido
Dibos, Alan M.
Zhang, Jiefei
Heremans, F. Joseph
Awschalom, David D.

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Institutionen der Bundesrepublik Deutschland: 13N16212

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Physical Review Applied. American Physical Society (APS). 2024, 22(4), 044078. eISSN 2331-7019. VerfĂŒgbar unter: doi: 10.1103/physrevapplied.22.044078

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Optically interfaced solid-state defects are promising candidates for quantum communication technologies. The ideal defect system would feature bright telecom emission, long-lived spin states, and a scalable material platform, simultaneously. Here we use one such system, vanadium (V4+) in silicon carbide, to establish a potential telecom spin-photon interface within a mature semiconductor host. This demonstration of efficient optical spin polarization and readout facilitates all-optical measurements of temperature-dependent spin relaxation times (𝑇1). By using this technique, and lowering the temperature from approximately 2 K to approximately 100 mK, we observe a remarkable 4-orders-of-magnitude increase in spin 𝑇1 across all measured sites, with site-specific values ranging from 57.1 ms to 27.9 s. Furthermore, we identify the underlying relaxation mechanisms, which involve a two-phonon Orbach process, indicating the opportunity for strain tuning to enable qubit operation at higher temperatures. These results position V4+ in SiⁱC as a prime candidate for scalable quantum nodes in future quantum networks.

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ISO 690AHN, Jonghoon, Christina WICKER, Nolan BITNER, Michael T. SOLOMON, Benedikt TISSOT, Guido BURKARD, Alan M. DIBOS, Jiefei ZHANG, F. Joseph HEREMANS, David D. AWSCHALOM, 2024. Extended spin relaxation times of optically addressed vanadium defects in silicon carbide at telecommunication frequencies. In: Physical Review Applied. American Physical Society (APS). 2024, 22(4), 044078. eISSN 2331-7019. VerfĂŒgbar unter: doi: 10.1103/physrevapplied.22.044078
BibTex
@article{Ahn2024-10-29Exten-71152,
  year={2024},
  doi={10.1103/physrevapplied.22.044078},
  title={Extended spin relaxation times of optically addressed vanadium defects in silicon carbide at telecommunication frequencies},
  number={4},
  volume={22},
  journal={Physical Review Applied},
  author={Ahn, Jonghoon and Wicker, Christina and Bitner, Nolan and Solomon, Michael T. and Tissot, Benedikt and Burkard, Guido and Dibos, Alan M. and Zhang, Jiefei and Heremans, F. Joseph and Awschalom, David D.},
  note={Article Number: 044078}
}
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