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Strong non-Arrhenius temperature dependence of the resistivity in the regime of traditional band transport

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2006

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Michel, Christoph
Baranovskii, Sergei D.
Klar, Peter J.
Thomas, Peter

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https://doi.org/10.1063/1.2348771
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Applied Physics Letters. 2006, 89(11), 112116. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.2348771

Zusammenfassung

When a strong, though non-Arrhenius temperature dependence of electrical resistivity is observed, one usually concludes that the underlying mechanism is variable-range hopping. Unexpectedly, such observations are also made for many semiconductor systems at elevated temperatures, where a variable-range hopping mechanism seems unlikely. A satisfactory explanation for this observation is still lacking up to now. The authors demonstrate that a non-Arrhenius resistivity behavior may also arise in a band transport picture by thermal activation of charge carriers from a reservoir into the transport-carrying band states, provided the energy distribution of reservoir states is sufficiently broadened or the density of band states exhibits tails.

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004 Informatik

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Electrical resistivity, Charge carriers, Hopping transport, Semiconductors, Activation energies

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ISO 690MICHEL, Christoph, Sergei D. BARANOVSKII, Peter J. KLAR, Peter THOMAS, Bastian GOLDLÜCKE, 2006. Strong non-Arrhenius temperature dependence of the resistivity in the regime of traditional band transport. In: Applied Physics Letters. 2006, 89(11), 112116. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.2348771
BibTex
@article{Michel2006Stron-29086,
  year={2006},
  doi={10.1063/1.2348771},
  title={Strong non-Arrhenius temperature dependence of the resistivity in the regime of traditional band transport},
  number={11},
  volume={89},
  issn={0003-6951},
  journal={Applied Physics Letters},
  author={Michel, Christoph and Baranovskii, Sergei D. and Klar, Peter J. and Thomas, Peter and Goldlücke, Bastian},
  note={Article Number: 112116}
}
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