Publikation: Chemoselective Surface Trap-Mediated Metal Growth on Semiconductor Nanocrystals
Dateien
Datum
Autor:innen
Herausgeber:innen
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
DOI (zitierfähiger Link)
Internationale Patentnummer
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Core Facility der Universität Konstanz
Titel in einer weiteren Sprache
Publikationstyp
Publikationsstatus
Erschienen in
Zusammenfassung
We present a highly chemoselective deposition of precious metals on semiconductor nanoheterostructures with a strong preference for cadmium and zinc telluride over the lighter chalcogenides. The selectivity is explained by p-type surface traps on the tellurides, compared to n-type defects of the homologous sulfides and selenides, and can be turned off by passivating the particle surface. The results give insight into the nature and role of surface defects for semiconductor nanocrystals. The fast formation of many, small metal seeds leads to aggregation of the particles into star-shaped or branched superstructures, leaving the rest of the semiconductor surface exposed. It provides a preparative route toward complex, yet well-defined semiconductor-metal hybrid structures with potential application in photocatalysis.
Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
Schlagwörter
Konferenz
Rezension
Zitieren
ISO 690
SUTTER, Sebastian, Jonas GRINGS, Klaus BOLDT, 2022. Chemoselective Surface Trap-Mediated Metal Growth on Semiconductor Nanocrystals. In: Chemistry of Materials. American Chemical Society (ACS). 2022, 34(3), pp. 1325-1333. ISSN 0897-4756. eISSN 1520-5002. Available under: doi: 10.1021/acs.chemmater.1c04010BibTex
@article{Sutter2022Chemo-56683, year={2022}, doi={10.1021/acs.chemmater.1c04010}, title={Chemoselective Surface Trap-Mediated Metal Growth on Semiconductor Nanocrystals}, number={3}, volume={34}, issn={0897-4756}, journal={Chemistry of Materials}, pages={1325--1333}, author={Sutter, Sebastian and Grings, Jonas and Boldt, Klaus} }
RDF
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/56683"> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/29"/> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2022-02-25T08:20:38Z</dcterms:available> <dc:creator>Grings, Jonas</dc:creator> <dc:creator>Boldt, Klaus</dc:creator> <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/> <dc:contributor>Grings, Jonas</dc:contributor> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <foaf:homepage rdf:resource="http://localhost:8080/"/> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2022-02-25T08:20:38Z</dc:date> <dc:contributor>Boldt, Klaus</dc:contributor> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/56683"/> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/52"/> <dcterms:title>Chemoselective Surface Trap-Mediated Metal Growth on Semiconductor Nanocrystals</dcterms:title> <dc:language>eng</dc:language> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/52"/> <dc:contributor>Sutter, Sebastian</dc:contributor> <dcterms:issued>2022</dcterms:issued> <dc:rights>terms-of-use</dc:rights> <dcterms:abstract xml:lang="eng">We present a highly chemoselective deposition of precious metals on semiconductor nanoheterostructures with a strong preference for cadmium and zinc telluride over the lighter chalcogenides. The selectivity is explained by p-type surface traps on the tellurides, compared to n-type defects of the homologous sulfides and selenides, and can be turned off by passivating the particle surface. The results give insight into the nature and role of surface defects for semiconductor nanocrystals. The fast formation of many, small metal seeds leads to aggregation of the particles into star-shaped or branched superstructures, leaving the rest of the semiconductor surface exposed. It provides a preparative route toward complex, yet well-defined semiconductor-metal hybrid structures with potential application in photocatalysis.</dcterms:abstract> <dc:creator>Sutter, Sebastian</dc:creator> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/29"/> </rdf:Description> </rdf:RDF>