Publikation:

In situ control of electron gas dimensionality in freely suspended semiconductor membranes

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Hoehberger_255652.pdf
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2003

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Krämer, Tomas
Wegscheider, Werner
Blick, Robert H.

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http://nbn-resolving.de/urn:nbn:de:bsz:352-255652
DOI (zitierfähiger Link)
https://doi.org/10.1063/1.1580641
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Applied Physics Letters. 2003, 82(23), pp. 4160-4162. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.1580641

Zusammenfassung

We present fabrication and measurements of gated suspended low-dimensional electron systems. The core component of the device is a low-dimensional electron gas embedded in a free-standing beam processed from a GaAs/AlGaAs heterostructure. The dimensionality of the electronic system is fully controlled by a number of gating electrodes on the suspended membranes. Operation in the quantum Hall regime, in the one-dimensional case, and as zero-dimensional quantum dots is demonstrated. The resulting devices can be applied as ultrasensitive bolometers and as nanoelectromechanical circuits that reach the ultimate limits of displacement detection.

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ISO 690WEIG, Eva M., Tomas KRÄMER, Werner WEGSCHEIDER, Robert H. BLICK, 2003. In situ control of electron gas dimensionality in freely suspended semiconductor membranes. In: Applied Physics Letters. 2003, 82(23), pp. 4160-4162. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.1580641
BibTex
@article{Weig2003contr-25565,
  year={2003},
  doi={10.1063/1.1580641},
  title={In situ control of electron gas dimensionality in freely suspended semiconductor membranes},
  number={23},
  volume={82},
  issn={0003-6951},
  journal={Applied Physics Letters},
  pages={4160--4162},
  author={Weig, Eva M. and Krämer, Tomas and Wegscheider, Werner and Blick, Robert H.}
}
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