Publikation: Thermally Stable Surface Passivation by A-Si:H / SiN Double Layers for Crystalline Silicon Solar Cells
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2008
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LINCOT, D., ed. and others. The compiled state-of-the-art of PV solar technology and deployment : 23rd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Valencia, Spain, 1 - 5 September 2008. [München]: WIP-Renewable Energies, 2008, pp. 1033-1035. ISBN 3-936338-24-8. Available under: doi: 10.4229/23rdEUPVSEC2008-2AO.2.5
Zusammenfassung
The thermal stability of the amorphous silicon / silicon nitride double layer surface passivation on p-type crystalline silicon surfaces is investigated for various deposition temperatures of the silicon nitride capping layer. An increase of deposition temperature from 300°C to 400°C results in a significant improvement of the thermal stability of the surface passivation. The minimum surface recombination velocity achieved on p-type (1.5 cm) silicon wafers is (0.75 ± 0.6) cm/s and remains at (10 ± 0.5) cm/s even after 30 min annealing at 500°C.
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530 Physik
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23rd European Photovoltaic Solar Energy Conference and Exhibition, 1. Sept. 2008 - 5. Sept. 2008, Valencia
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GATZ, Sebastian, Heiko PLAGWITZ, Pietro P. ALTERMATT, Barbara TERHEIDEN, Rolf BRENDEL, 2008. Thermally Stable Surface Passivation by A-Si:H / SiN Double Layers for Crystalline Silicon Solar Cells. 23rd European Photovoltaic Solar Energy Conference and Exhibition. Valencia, 1. Sept. 2008 - 5. Sept. 2008. In: LINCOT, D., ed. and others. The compiled state-of-the-art of PV solar technology and deployment : 23rd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Valencia, Spain, 1 - 5 September 2008. [München]: WIP-Renewable Energies, 2008, pp. 1033-1035. ISBN 3-936338-24-8. Available under: doi: 10.4229/23rdEUPVSEC2008-2AO.2.5BibTex
@inproceedings{Gatz2008Therm-32069,
year={2008},
doi={10.4229/23rdEUPVSEC2008-2AO.2.5},
title={Thermally Stable Surface Passivation by A-Si:H / SiN Double Layers for Crystalline Silicon Solar Cells},
isbn={3-936338-24-8},
publisher={WIP-Renewable Energies},
address={[München]},
booktitle={The compiled state-of-the-art of PV solar technology and deployment : 23rd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Valencia, Spain, 1 - 5 September 2008},
pages={1033--1035},
editor={Lincot, D.},
author={Gatz, Sebastian and Plagwitz, Heiko and Altermatt, Pietro P. and Terheiden, Barbara and Brendel, Rolf}
}RDF
<rdf:RDF
xmlns:dcterms="http://purl.org/dc/terms/"
xmlns:dc="http://purl.org/dc/elements/1.1/"
xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
xmlns:bibo="http://purl.org/ontology/bibo/"
xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
xmlns:foaf="http://xmlns.com/foaf/0.1/"
xmlns:void="http://rdfs.org/ns/void#"
xmlns:xsd="http://www.w3.org/2001/XMLSchema#" >
<rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/32069">
<dcterms:abstract xml:lang="eng">The thermal stability of the amorphous silicon / silicon nitride double layer surface passivation on p-type crystalline silicon surfaces is investigated for various deposition temperatures of the silicon nitride capping layer. An increase of deposition temperature from 300°C to 400°C results in a significant improvement of the thermal stability of the surface passivation. The minimum surface recombination velocity achieved on p-type (1.5 cm) silicon wafers is (0.75 ± 0.6) cm/s and remains at (10 ± 0.5) cm/s even after 30 min annealing at 500°C.</dcterms:abstract>
<dc:creator>Terheiden, Barbara</dc:creator>
<dc:creator>Gatz, Sebastian</dc:creator>
<dc:creator>Altermatt, Pietro P.</dc:creator>
<void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
<dc:contributor>Terheiden, Barbara</dc:contributor>
<dc:contributor>Brendel, Rolf</dc:contributor>
<dc:language>eng</dc:language>
<dc:contributor>Plagwitz, Heiko</dc:contributor>
<foaf:homepage rdf:resource="http://localhost:8080/"/>
<bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/32069"/>
<dcterms:title>Thermally Stable Surface Passivation by A-Si:H / SiN Double Layers for Crystalline Silicon Solar Cells</dcterms:title>
<dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-11-05T10:04:25Z</dc:date>
<dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-11-05T10:04:25Z</dcterms:available>
<dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<dc:contributor>Altermatt, Pietro P.</dc:contributor>
<dc:creator>Brendel, Rolf</dc:creator>
<dc:creator>Plagwitz, Heiko</dc:creator>
<dcterms:issued>2008</dcterms:issued>
<dc:contributor>Gatz, Sebastian</dc:contributor>
</rdf:Description>
</rdf:RDF>Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
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