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Short-wavelength intersubband absorption in strain compensated InGaAs/AlAs quantum well structures grown on InP

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2003

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Georgiev, Nikolai
Eichhorn, Frank
Helm, Manfred
Semtsiv, Mykhaylo P.
Masselink, William Ted

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Applied Physics Letters. 2003, 83(2), pp. 210-212. Available under: doi: 10.1063/1.1592315

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We have studied intersubband absorption in strain compensated InxGa1 xAs/AlAs/InyAl1 yAs multiple quantum wells and superlattices grown on InP. X-ray diffraction shows that the layers are pseudomorphically strained and exhibit slight compositional grading of the interfaces. Owing to the high AlAs barriers, the intersubband absorption can be tailored to wavelengths shorter than 2 µm. In some samples, a small, but non-negligible absorption is also observed with s-polarized light.

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ISO 690GEORGIEV, Nikolai, Thomas DEKORSY, Frank EICHHORN, Manfred HELM, Mykhaylo P. SEMTSIV, William Ted MASSELINK, 2003. Short-wavelength intersubband absorption in strain compensated InGaAs/AlAs quantum well structures grown on InP. In: Applied Physics Letters. 2003, 83(2), pp. 210-212. Available under: doi: 10.1063/1.1592315
BibTex
@article{Georgiev2003Short-9252,
  year={2003},
  doi={10.1063/1.1592315},
  title={Short-wavelength intersubband absorption in strain compensated InGaAs/AlAs quantum well structures grown on InP},
  number={2},
  volume={83},
  journal={Applied Physics Letters},
  pages={210--212},
  author={Georgiev, Nikolai and Dekorsy, Thomas and Eichhorn, Frank and Helm, Manfred and Semtsiv, Mykhaylo P. and Masselink, William Ted}
}
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