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Theory of silicon spin qubit relaxation in a synthetic spin-orbit field

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2022

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Physical Review B. American Physical Society (APS). 2022, 106(7), 075415. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.106.075415

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We develop the theory of single-electron silicon spin qubit relaxation in the presence of a magnetic field gradient. Such field gradients are routinely generated by on-chip micromagnets to allow for electrically controlled quantum gates on spin qubits. We build on a valley-dependent envelope function theory that enables the analysis of the electron wave function in a silicon quantum dot with an arbitrary roughness at the interface. We assume the presence of single-layer atomic steps at a Si/SiGe interface and study how the presence of a gradient field modifies the spin-mixing mechanisms. We show that our theoretical modeling can quantitatively reproduce the results of experimental measurements of qubit relaxation in silicon in the presence of a micromagnet. We further study how a field gradient can modify the EDSR Rabi frequency as well as the quality factor of a silicon spin qubit. We show that this strongly depends on the details of the interface roughness. Interestingly, for a quantum dot with an ideally flat interface, adding a micromagnet can give rise to the reduction of the EDSR frequency within some interval of the external magnetic field strength.

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ISO 690HOSSEINKHANI, Amin, Guido BURKARD, 2022. Theory of silicon spin qubit relaxation in a synthetic spin-orbit field. In: Physical Review B. American Physical Society (APS). 2022, 106(7), 075415. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.106.075415
BibTex
@article{Hosseinkhani2022Theor-58814,
  year={2022},
  doi={10.1103/PhysRevB.106.075415},
  title={Theory of silicon spin qubit relaxation in a synthetic spin-orbit field},
  number={7},
  volume={106},
  issn={2469-9950},
  journal={Physical Review B},
  author={Hosseinkhani, Amin and Burkard, Guido},
  note={Article Number: 075415}
}
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    <dcterms:abstract xml:lang="eng">We develop the theory of single-electron silicon spin qubit relaxation in the presence of a magnetic field gradient. Such field gradients are routinely generated by on-chip micromagnets to allow for electrically controlled quantum gates on spin qubits. We build on a valley-dependent envelope function theory that enables the analysis of the electron wave function in a silicon quantum dot with an arbitrary roughness at the interface. We assume the presence of single-layer atomic steps at a Si/SiGe interface and study how the presence of a gradient field modifies the spin-mixing mechanisms. We show that our theoretical modeling can quantitatively reproduce the results of experimental measurements of qubit relaxation in silicon in the presence of a micromagnet. We further study how a field gradient can modify the EDSR Rabi frequency as well as the quality factor of a silicon spin qubit. We show that this strongly depends on the details of the interface roughness. Interestingly, for a quantum dot with an ideally flat interface, adding a micromagnet can give rise to the reduction of the EDSR frequency within some interval of the external magnetic field strength.</dcterms:abstract>
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