Publikation: Evolution of Pore Reorganization of Porous Silicon
Dateien
Datum
Herausgeber:innen
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
URI (zitierfähiger Link)
DOI (zitierfähiger Link)
Internationale Patentnummer
Link zur Lizenz
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Sammlungen
Core Facility der Universität Konstanz
Titel in einer weiteren Sprache
Publikationstyp
Publikationsstatus
Erschienen in
Zusammenfassung
To obtain a closed and smooth surface of a porous Si layer for an epitaxial growth of a silicon wafer, the porous Si must be reorganized. To understand the reorganization process, the evolution of the pores is investigated in this contribution. The reorganization process is interrupted at different stages and cross-sectional SEM images are taken to evaluate the change in pore size and shape during reorganization. Additionally, the stress is measured using XRD. At the beginning of the reorganization of the pores, the as-etched columnar pores with diameters of about 5 nm become coarser with larger diameters. At temperatures above 900°C, the surface closes and thus becomes smooth. In addition, the form of the pores starts to change from columnar to round with diameters between 55-65 nm. When the highest temperature of 1100°C is reached, the columnar pores have disappeared and the pores are round and faceted. With an additional plateau time of up to 20 min, there is no visible change in pore faceting. The as-etched sample shows tensile stress and the sample annealed at 700°C is nearly unstressed. When the temperature is increased beyond 900°C, the stress is compressive and no further change is visible.
Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
Schlagwörter
Konferenz
Rezension
Zitieren
ISO 690
SANZ, Sarah, Yves Patrick BOTCHAK, Giso HAHN, Gabriel MICARD, Barbara TERHEIDEN, 2024. Evolution of Pore Reorganization of Porous Silicon. SiliconPV 2024, 14th International Conference on Crystalline Silicon Photovoltaics. Chambéry, France, 15. Apr. 2024 - 19. Apr. 2024. In: DUBOIS, Sébastien, Hrsg.. SiliconPV 2024, the 14th International Conference on Crystalline Silicon Photovoltaics : April 15 - April 19 2024, Chambéry, France. Hannover: TIB Open Publishing, 2024. SiliconPV proceedings. 2. eISSN 2940-2123. Verfügbar unter: doi: 10.52825/siliconpv.v2i.1275BibTex
@inproceedings{Sanz2024-12-06Evolu-72183, title={Evolution of Pore Reorganization of Porous Silicon}, year={2024}, doi={10.52825/siliconpv.v2i.1275}, number={2}, address={Hannover}, publisher={TIB Open Publishing}, series={SiliconPV proceedings}, booktitle={SiliconPV 2024, the 14th International Conference on Crystalline Silicon Photovoltaics : April 15 - April 19 2024, Chambéry, France}, editor={Dubois, Sébastien}, author={Sanz, Sarah and Botchak, Yves Patrick and Hahn, Giso and Micard, Gabriel and Terheiden, Barbara} }
RDF
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/72183"> <dc:creator>Botchak, Yves Patrick</dc:creator> <dc:creator>Terheiden, Barbara</dc:creator> <dcterms:issued>2024-12-06</dcterms:issued> <dc:creator>Sanz, Sarah</dc:creator> <dc:creator>Micard, Gabriel</dc:creator> <dcterms:abstract>To obtain a closed and smooth surface of a porous Si layer for an epitaxial growth of a silicon wafer, the porous Si must be reorganized. To understand the reorganization process, the evolution of the pores is investigated in this contribution. The reorganization process is interrupted at different stages and cross-sectional SEM images are taken to evaluate the change in pore size and shape during reorganization. Additionally, the stress is measured using XRD. At the beginning of the reorganization of the pores, the as-etched columnar pores with diameters of about 5 nm become coarser with larger diameters. At temperatures above 900°C, the surface closes and thus becomes smooth. In addition, the form of the pores starts to change from columnar to round with diameters between 55-65 nm. When the highest temperature of 1100°C is reached, the columnar pores have disappeared and the pores are round and faceted. With an additional plateau time of up to 20 min, there is no visible change in pore faceting. The as-etched sample shows tensile stress and the sample annealed at 700°C is nearly unstressed. When the temperature is increased beyond 900°C, the stress is compressive and no further change is visible.</dcterms:abstract> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2025-02-04T12:42:04Z</dc:date> <dc:language>eng</dc:language> <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by/4.0/"/> <dc:rights>Attribution 4.0 International</dc:rights> <dc:contributor>Terheiden, Barbara</dc:contributor> <dc:contributor>Hahn, Giso</dc:contributor> <dc:contributor>Botchak, Yves Patrick</dc:contributor> <foaf:homepage rdf:resource="http://localhost:8080/"/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dc:creator>Hahn, Giso</dc:creator> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/72183/1/Sanz_2-1szm42mpzit4m3.pdf"/> <dcterms:title>Evolution of Pore Reorganization of Porous Silicon</dcterms:title> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/72183/1/Sanz_2-1szm42mpzit4m3.pdf"/> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <dc:contributor>Micard, Gabriel</dc:contributor> <dc:contributor>Sanz, Sarah</dc:contributor> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2025-02-04T12:42:04Z</dcterms:available> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/72183"/> </rdf:Description> </rdf:RDF>