Publikation:

Evolution of Pore Reorganization of Porous Silicon

Lade...
Vorschaubild

Dateien

Sanz_2-1szm42mpzit4m3.pdf
Sanz_2-1szm42mpzit4m3.pdfGröße: 1.65 MBDownloads: 1

Datum

2024

Herausgeber:innen

Kontakt

ISSN der Zeitschrift

Electronic ISSN

ISBN

Bibliografische Daten

Verlag

Schriftenreihe

Auflagebezeichnung

ArXiv-ID

Internationale Patentnummer

Link zur Lizenz

Angaben zur Forschungsförderung

Projekt

Open Access-Veröffentlichung
Open Access Bookpart
Core Facility der Universität Konstanz

Gesperrt bis

Titel in einer weiteren Sprache

Publikationstyp
Beitrag zu einem Konferenzband
Publikationsstatus
Published

Erschienen in

DUBOIS, Sébastien, Hrsg.. SiliconPV 2024, the 14th International Conference on Crystalline Silicon Photovoltaics : April 15 - April 19 2024, Chambéry, France. Hannover: TIB Open Publishing, 2024. SiliconPV proceedings. 2. eISSN 2940-2123. Verfügbar unter: doi: 10.52825/siliconpv.v2i.1275

Zusammenfassung

To obtain a closed and smooth surface of a porous Si layer for an epitaxial growth of a silicon wafer, the porous Si must be reorganized. To understand the reorganization process, the evolution of the pores is investigated in this contribution. The reorganization process is interrupted at different stages and cross-sectional SEM images are taken to evaluate the change in pore size and shape during reorganization. Additionally, the stress is measured using XRD. At the beginning of the reorganization of the pores, the as-etched columnar pores with diameters of about 5 nm become coarser with larger diameters. At temperatures above 900°C, the surface closes and thus becomes smooth. In addition, the form of the pores starts to change from columnar to round with diameters between 55-65 nm. When the highest temperature of 1100°C is reached, the columnar pores have disappeared and the pores are round and faceted. With an additional plateau time of up to 20 min, there is no visible change in pore faceting. The as-etched sample shows tensile stress and the sample annealed at 700°C is nearly unstressed. When the temperature is increased beyond 900°C, the stress is compressive and no further change is visible.

Zusammenfassung in einer weiteren Sprache

Fachgebiet (DDC)
530 Physik

Schlagwörter

Porous Silicon, Reorganization, Stress Measurement

Konferenz

SiliconPV 2024, 14th International Conference on Crystalline Silicon Photovoltaics, 15. Apr. 2024 - 19. Apr. 2024, Chambéry, France
Rezension
undefined / . - undefined, undefined

Forschungsvorhaben

Organisationseinheiten

Zeitschriftenheft

Zugehörige Datensätze in KOPS

Zitieren

ISO 690SANZ, Sarah, Yves Patrick BOTCHAK, Giso HAHN, Gabriel MICARD, Barbara TERHEIDEN, 2024. Evolution of Pore Reorganization of Porous Silicon. SiliconPV 2024, 14th International Conference on Crystalline Silicon Photovoltaics. Chambéry, France, 15. Apr. 2024 - 19. Apr. 2024. In: DUBOIS, Sébastien, Hrsg.. SiliconPV 2024, the 14th International Conference on Crystalline Silicon Photovoltaics : April 15 - April 19 2024, Chambéry, France. Hannover: TIB Open Publishing, 2024. SiliconPV proceedings. 2. eISSN 2940-2123. Verfügbar unter: doi: 10.52825/siliconpv.v2i.1275
BibTex
@inproceedings{Sanz2024-12-06Evolu-72183,
  title={Evolution of Pore Reorganization of Porous Silicon},
  year={2024},
  doi={10.52825/siliconpv.v2i.1275},
  number={2},
  address={Hannover},
  publisher={TIB Open Publishing},
  series={SiliconPV proceedings},
  booktitle={SiliconPV 2024, the 14th International Conference on Crystalline Silicon Photovoltaics : April 15 - April 19 2024, Chambéry, France},
  editor={Dubois, Sébastien},
  author={Sanz, Sarah and Botchak, Yves Patrick and Hahn, Giso and Micard, Gabriel and Terheiden, Barbara}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/72183">
    <dc:creator>Botchak, Yves Patrick</dc:creator>
    <dc:creator>Terheiden, Barbara</dc:creator>
    <dcterms:issued>2024-12-06</dcterms:issued>
    <dc:creator>Sanz, Sarah</dc:creator>
    <dc:creator>Micard, Gabriel</dc:creator>
    <dcterms:abstract>To obtain a closed and smooth surface of a porous Si layer for an epitaxial growth of a silicon wafer, the porous Si must be reorganized. To understand the reorganization process, the evolution of the pores is investigated in this contribution. The reorganization process is interrupted at different stages and cross-sectional SEM images are taken to evaluate the change in pore size and shape during reorganization. Additionally, the stress is measured using XRD. At the beginning of the reorganization of the pores, the as-etched columnar pores with diameters of about 5 nm become coarser with larger diameters. At temperatures above 900°C, the surface closes and thus becomes smooth. In addition, the form of the pores starts to change from columnar to round with diameters between 55-65 nm. When the highest temperature of 1100°C is reached, the columnar pores have disappeared and the pores are round and faceted. With an additional plateau time of up to 20 min, there is no visible change in pore faceting. The as-etched sample shows tensile stress and the sample annealed at 700°C is nearly unstressed. When the temperature is increased beyond 900°C, the stress is compressive and no further change is visible.</dcterms:abstract>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2025-02-04T12:42:04Z</dc:date>
    <dc:language>eng</dc:language>
    <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by/4.0/"/>
    <dc:rights>Attribution 4.0 International</dc:rights>
    <dc:contributor>Terheiden, Barbara</dc:contributor>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:contributor>Botchak, Yves Patrick</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:creator>Hahn, Giso</dc:creator>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/72183/1/Sanz_2-1szm42mpzit4m3.pdf"/>
    <dcterms:title>Evolution of Pore Reorganization of Porous Silicon</dcterms:title>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/72183/1/Sanz_2-1szm42mpzit4m3.pdf"/>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Micard, Gabriel</dc:contributor>
    <dc:contributor>Sanz, Sarah</dc:contributor>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2025-02-04T12:42:04Z</dcterms:available>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/72183"/>
  </rdf:Description>
</rdf:RDF>

Interner Vermerk

xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter

Kontakt
URL der Originalveröffentl.

Prüfdatum der URL

Prüfungsdatum der Dissertation

Finanzierungsart

Kommentar zur Publikation

Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Diese Publikation teilen