Publikation: Efficient silicon based light emitters
Lade...
Dateien
Datum
2005
Autor:innen
Herausgeber:innen
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
URI (zitierfähiger Link)
DOI (zitierfähiger Link)
Internationale Patentnummer
Link zur Lizenz
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Green
Sammlungen
Core Facility der Universität Konstanz
Titel in einer weiteren Sprache
Publikationstyp
Zeitschriftenartikel
Publikationsstatus
Published
Erschienen in
Microelectronics Journal. 2005, 36, pp. 957-962. Available under: doi: 10.1016/j.mejo.2005.04.002
Zusammenfassung
Recent progress on electrically driven silicon based light emitters is reviewed, with emphasis on our work on light emitting pn diodes (LED) and MOS devices doped with rare-earth elements. The LEDs were fabricated by high-dose boron implantation, producing nanoscale modifications in the material. The electroluminescence (EL) efficiency increases with temperature, reaching 0.1% (wall plug efficiency) at room temperature for optimized conditions. Such devices were integrated into a microcavity. In the MOS devices, the oxide was implanted with various rare-earth elements, resulting in strong EL in the visible (Tb) and ultraviolet (Gd). External quantum efficiencies in excess of 10% are reported.
Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
Silicon light emitters, Ion implantation, Rare earth, Microcavity, Electroluminescence
Konferenz
Rezension
undefined / . - undefined, undefined
Zitieren
ISO 690
HELM, Manfred, Jiaming SUN, Jaroslava POTFAJOVA, Thomas DEKORSY, Bernd SCHMIDT, Wolfgang SKORUPA, 2005. Efficient silicon based light emitters. In: Microelectronics Journal. 2005, 36, pp. 957-962. Available under: doi: 10.1016/j.mejo.2005.04.002BibTex
@article{Helm2005Effic-4755,
year={2005},
doi={10.1016/j.mejo.2005.04.002},
title={Efficient silicon based light emitters},
volume={36},
journal={Microelectronics Journal},
pages={957--962},
author={Helm, Manfred and Sun, Jiaming and Potfajova, Jaroslava and Dekorsy, Thomas and Schmidt, Bernd and Skorupa, Wolfgang}
}RDF
<rdf:RDF
xmlns:dcterms="http://purl.org/dc/terms/"
xmlns:dc="http://purl.org/dc/elements/1.1/"
xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
xmlns:bibo="http://purl.org/ontology/bibo/"
xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
xmlns:foaf="http://xmlns.com/foaf/0.1/"
xmlns:void="http://rdfs.org/ns/void#"
xmlns:xsd="http://www.w3.org/2001/XMLSchema#" >
<rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/4755">
<dc:creator>Sun, Jiaming</dc:creator>
<dc:creator>Dekorsy, Thomas</dc:creator>
<dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<dc:creator>Schmidt, Bernd</dc:creator>
<dc:creator>Helm, Manfred</dc:creator>
<dcterms:title>Efficient silicon based light emitters</dcterms:title>
<dc:contributor>Potfajova, Jaroslava</dc:contributor>
<dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/4755/1/Efficient_silicon_based_light_emitters.pdf"/>
<dcterms:abstract xml:lang="eng">Recent progress on electrically driven silicon based light emitters is reviewed, with emphasis on our work on light emitting pn diodes (LED) and MOS devices doped with rare-earth elements. The LEDs were fabricated by high-dose boron implantation, producing nanoscale modifications in the material. The electroluminescence (EL) efficiency increases with temperature, reaching 0.1% (wall plug efficiency) at room temperature for optimized conditions. Such devices were integrated into a microcavity. In the MOS devices, the oxide was implanted with various rare-earth elements, resulting in strong EL in the visible (Tb) and ultraviolet (Gd). External quantum efficiencies in excess of 10% are reported.</dcterms:abstract>
<dc:contributor>Schmidt, Bernd</dc:contributor>
<dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/4755/1/Efficient_silicon_based_light_emitters.pdf"/>
<dcterms:bibliographicCitation>First publ. in: Microelectronics Journal 36 (2005), pp. 957-962</dcterms:bibliographicCitation>
<dc:creator>Potfajova, Jaroslava</dc:creator>
<dcterms:issued>2005</dcterms:issued>
<dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:50:06Z</dcterms:available>
<dc:contributor>Sun, Jiaming</dc:contributor>
<dc:contributor>Helm, Manfred</dc:contributor>
<bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/4755"/>
<dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/2.0/"/>
<dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:50:06Z</dc:date>
<dc:language>eng</dc:language>
<foaf:homepage rdf:resource="http://localhost:8080/"/>
<void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
<dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights>
<dc:creator>Skorupa, Wolfgang</dc:creator>
<dc:contributor>Dekorsy, Thomas</dc:contributor>
<dc:format>application/pdf</dc:format>
<dc:contributor>Skorupa, Wolfgang</dc:contributor>
</rdf:Description>
</rdf:RDF>Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
