Publikation: Minimizing the electrical losses on the front side: development of a selective emitter process from a single diffusion
Lade...
Dateien
Datum
2008
Autor:innen
Herausgeber:innen
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
URI (zitierfähiger Link)
DOI (zitierfähiger Link)
Internationale Patentnummer
Link zur Lizenz
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Green
Sammlungen
Core Facility der Universität Konstanz
Titel in einer weiteren Sprache
Publikationstyp
Beitrag zu einem Konferenzband
Publikationsstatus
Published
Erschienen in
2008 33rd IEEE Photovolatic Specialists Conference. IEEE, 2008, pp. 1-4. ISSN 0160-8371. ISBN 978-1-4244-1640-0. Available under: doi: 10.1109/PVSC.2008.4922443
Zusammenfassung
In this paper we present latest results in the development of a process for the abrication of a selective emitter structure on mono- and multicrystalline silicon solar cells. The process is based on an approach that was first introduced by Zerga et al. [1]. We have chosen a wet chemical route for an emitter etch back where the areas of the wafer that are intended for emitter metallization are shielded from etching by a screen printable etch barrier. The etch barrier is later removed by wet chemical etching. The process has yielded a gain in open circuit voltage of more than 1% and a gain in short circuit current of more than 2%. The overall efficiency gain was more than 0.3%abs due to slightly lower fill factor of the cells.
Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
Konferenz
2008 33rd IEEE Photovolatic Specialists Conference (PVSC), 11. Mai 2008 - 16. Mai 2008, San Diego, CA, USA
Rezension
undefined / . - undefined, undefined
Zitieren
ISO 690
HAVERKAMP, Helge, Amir DASTGHEIB-SHIRAZI, Bernd RAABE, Felix BOOK, Giso HAHN, 2008. Minimizing the electrical losses on the front side: development of a selective emitter process from a single diffusion. 2008 33rd IEEE Photovolatic Specialists Conference (PVSC). San Diego, CA, USA, 11. Mai 2008 - 16. Mai 2008. In: 2008 33rd IEEE Photovolatic Specialists Conference. IEEE, 2008, pp. 1-4. ISSN 0160-8371. ISBN 978-1-4244-1640-0. Available under: doi: 10.1109/PVSC.2008.4922443BibTex
@inproceedings{Haverkamp2008-05Minim-838,
year={2008},
doi={10.1109/PVSC.2008.4922443},
title={Minimizing the electrical losses on the front side: development of a selective emitter process from a single diffusion},
isbn={978-1-4244-1640-0},
issn={0160-8371},
publisher={IEEE},
booktitle={2008 33rd IEEE Photovolatic Specialists Conference},
pages={1--4},
author={Haverkamp, Helge and Dastgheib-Shirazi, Amir and Raabe, Bernd and Book, Felix and Hahn, Giso}
}RDF
<rdf:RDF
xmlns:dcterms="http://purl.org/dc/terms/"
xmlns:dc="http://purl.org/dc/elements/1.1/"
xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
xmlns:bibo="http://purl.org/ontology/bibo/"
xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
xmlns:foaf="http://xmlns.com/foaf/0.1/"
xmlns:void="http://rdfs.org/ns/void#"
xmlns:xsd="http://www.w3.org/2001/XMLSchema#" >
<rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/838">
<dcterms:bibliographicCitation>Paper presented at the 33rd IEEE Photovoltaic Specialists Conference (PVSC), San Diego, California, USA, 11 - 16 May 2008</dcterms:bibliographicCitation>
<dc:contributor>Dastgheib-Shirazi, Amir</dc:contributor>
<dcterms:issued>2008-05</dcterms:issued>
<dc:contributor>Book, Felix</dc:contributor>
<dc:creator>Hahn, Giso</dc:creator>
<dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/838/1/Haverkamp_opus-121344.pdf"/>
<dc:contributor>Raabe, Bernd</dc:contributor>
<dc:rights>terms-of-use</dc:rights>
<dc:creator>Book, Felix</dc:creator>
<bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/838"/>
<dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/838/1/Haverkamp_opus-121344.pdf"/>
<dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:51:24Z</dcterms:available>
<void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
<dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<dc:contributor>Haverkamp, Helge</dc:contributor>
<dc:creator>Haverkamp, Helge</dc:creator>
<dc:creator>Dastgheib-Shirazi, Amir</dc:creator>
<dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:51:24Z</dc:date>
<dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
<dc:creator>Raabe, Bernd</dc:creator>
<dc:contributor>Hahn, Giso</dc:contributor>
<dc:language>eng</dc:language>
<dcterms:abstract xml:lang="eng">In this paper we present latest results in the development of a process for the abrication of a selective emitter structure on mono- and multicrystalline silicon solar cells. The process is based on an approach that was first introduced by Zerga et al. [1]. We have chosen a wet chemical route for an emitter etch back where the areas of the wafer that are intended for emitter metallization are shielded from etching by a screen printable etch barrier. The etch barrier is later removed by wet chemical etching. The process has yielded a gain in open circuit voltage of more than 1% and a gain in short circuit current of more than 2%. The overall efficiency gain was more than 0.3%abs due to slightly lower fill factor of the cells.</dcterms:abstract>
<dcterms:title>Minimizing the electrical losses on the front side: development of a selective emitter process from a single diffusion</dcterms:title>
<dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<foaf:homepage rdf:resource="http://localhost:8080/"/>
</rdf:Description>
</rdf:RDF>Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
