Laser cleaning of silicon wafers : mechanisms and efficiencies

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294_procSPIE_2002.pdf
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2002
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Bertsch, Micha
Münzer, Hans-Joachim
Dobler, Volker
Bäuerle, Dieter
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Laser Cleaning (SLC) process. Using a frequency doubled, Q-switched Nd:YAG laser (FWHM=8 ns) we removed polystyrene (PS) particles with diameters from 110-2000 nm from industrial silicon wafers by the DLC process. The experiments have been carried out both in ambient conditions as well as in high vacuum (10-6 mbar) and the cleaned areas have been characterized by atomic force microscopy for damage inspection. Besides the determining the cleaning thresholds in laser fluence for a large interval of particle size we could show that particle removal in DLC is due to a combination of at least three effects: thermal substrate expansion, local substrate ablation due to field enhancement at the particle and explosive evaporation of adsorbed humidity from the air. Which effect dominates the process is subject to the boundary conditions. For our laser parameters no damage free DLC was possible, i.e. whenever a particle was removed by DLC we damaged the substrate by local field enhancement. In our SLC experiments we determined the amount of superheating of a liquid layer adjacent to surfaces with controlled roughness that is necessary for bubble nucleation. On smooth surfaces high superheatins were necessary, in good agreement with theoretical predictions. Rough surfaces exhibited only a much smaller superheating.

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530 Physik
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Laser cleaning, cleaning mechanisms, field enhancement, superheating
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ISO 690MOSBACHER, Mario, Micha BERTSCH, Hans-Joachim MÜNZER, Volker DOBLER, Bernd-Uwe RUNGE, Dieter BÄUERLE, Johannes BONEBERG, Paul LEIDERER, 2002. Laser cleaning of silicon wafers : mechanisms and efficiencies. In: Proc of SPIE. 2002, 4426, pp. 308-314. Available under: doi: 10.1117/12.456821
BibTex
@article{Mosbacher2002Laser-9202,
  year={2002},
  doi={10.1117/12.456821},
  title={Laser cleaning of silicon wafers : mechanisms and efficiencies},
  volume={4426},
  journal={Proc  of SPIE},
  pages={308--314},
  author={Mosbacher, Mario and Bertsch, Micha and Münzer, Hans-Joachim and Dobler, Volker and Runge, Bernd-Uwe and Bäuerle, Dieter and Boneberg, Johannes and Leiderer, Paul}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/9202">
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:contributor>Mosbacher, Mario</dc:contributor>
    <dc:creator>Mosbacher, Mario</dc:creator>
    <dc:contributor>Bäuerle, Dieter</dc:contributor>
    <dc:contributor>Leiderer, Paul</dc:contributor>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:54:30Z</dcterms:available>
    <dc:creator>Bäuerle, Dieter</dc:creator>
    <dc:creator>Runge, Bernd-Uwe</dc:creator>
    <dc:format>application/pdf</dc:format>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/9202"/>
    <dc:contributor>Boneberg, Johannes</dc:contributor>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9202/1/294_procSPIE_2002.pdf"/>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:title>Laser cleaning of silicon wafers : mechanisms and efficiencies</dcterms:title>
    <dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights>
    <dc:contributor>Bertsch, Micha</dc:contributor>
    <dc:creator>Boneberg, Johannes</dc:creator>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9202/1/294_procSPIE_2002.pdf"/>
    <dc:creator>Bertsch, Micha</dc:creator>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/2.0/"/>
    <dc:creator>Leiderer, Paul</dc:creator>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:54:30Z</dc:date>
    <dc:contributor>Runge, Bernd-Uwe</dc:contributor>
    <dcterms:abstract xml:lang="eng">Laser Cleaning (SLC) process. Using a frequency doubled, Q-switched Nd:YAG laser (FWHM=8 ns) we removed polystyrene (PS) particles with diameters from 110-2000 nm from industrial silicon wafers by the DLC process. The experiments have been carried out both in ambient conditions as well as in high vacuum (10-6 mbar) and the cleaned areas have been characterized by atomic force microscopy for damage inspection. Besides the determining the cleaning thresholds in laser fluence for a large interval of particle size we could show that particle removal in DLC is due to a combination of at least three effects: thermal substrate expansion, local substrate ablation due to field enhancement at the particle and explosive evaporation of adsorbed humidity from the air. Which effect dominates the process is subject to the boundary conditions. For our laser parameters no damage free DLC was possible, i.e. whenever a particle was removed by DLC we damaged the substrate by local field enhancement. In our SLC experiments we determined the amount of superheating of a liquid layer adjacent to surfaces with controlled roughness that is necessary for bubble nucleation. On smooth surfaces high superheatins were necessary, in good agreement with theoretical predictions. Rough surfaces exhibited only a much smaller superheating.</dcterms:abstract>
    <dcterms:bibliographicCitation>First publ. in: Proc. of SPIE 4426 (2002). pp. 308-314</dcterms:bibliographicCitation>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:language>eng</dc:language>
    <dc:contributor>Münzer, Hans-Joachim</dc:contributor>
    <dc:creator>Dobler, Volker</dc:creator>
    <dcterms:issued>2002</dcterms:issued>
    <dc:contributor>Dobler, Volker</dc:contributor>
    <dc:creator>Münzer, Hans-Joachim</dc:creator>
  </rdf:Description>
</rdf:RDF>
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xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
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