Publikation: Light-induced degradation variation in industrial multicrystalline PERC silicon solar cells
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2018
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BALLIF, Christophe, ed.. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY: AIP Publishing, 2018, 130013. AIP Conference Proceedings. 1999,1. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049332
Zusammenfassung
Light and elevated temperature induced degradation (LeTID) varies significantly in multicrystalline PERC silicon solar cells, depending mainly on the solar cell processes. We show that despite high firing temperatures, LeTID can manifest itself in two different ways: 1) strong LeTID in good grains (jsc and Voc losses >7%rel.), or 2) low LeTID in good grains with stronger LeTID at dislocation clusters. Such LeTID at dislocation clusters is not only caused by a bulk recombination increase but also by an increased back-surface recombination velocity.
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530 Physik
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SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics, 19. März 2018 - 21. März 2018, Lausanne
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LINDROOS, Jeanette, Annika ZUSCHLAG, Jürgen CARSTENSEN, Giso HAHN, 2018. Light-induced degradation variation in industrial multicrystalline PERC silicon solar cells. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Lausanne, 19. März 2018 - 21. März 2018. In: BALLIF, Christophe, ed.. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY: AIP Publishing, 2018, 130013. AIP Conference Proceedings. 1999,1. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049332BibTex
@inproceedings{Lindroos2018Light-43640,
year={2018},
doi={10.1063/1.5049332},
title={Light-induced degradation variation in industrial multicrystalline PERC silicon solar cells},
number={1999,1},
isbn={978-0-7354-1715-1},
issn={0094-243X},
publisher={AIP Publishing},
address={Melville, NY},
series={AIP Conference Proceedings},
booktitle={SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics},
editor={Ballif, Christophe},
author={Lindroos, Jeanette and Zuschlag, Annika and Carstensen, Jürgen and Hahn, Giso},
note={Article Number: 130013}
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<dcterms:abstract xml:lang="eng">Light and elevated temperature induced degradation (LeTID) varies significantly in multicrystalline PERC silicon solar cells, depending mainly on the solar cell processes. We show that despite high firing temperatures, LeTID can manifest itself in two different ways: 1) strong LeTID in good grains (j<sub>sc</sub> and V<sub>oc</sub> losses >7%<sub>rel</sub>.), or 2) low LeTID in good grains with stronger LeTID at dislocation clusters. Such LeTID at dislocation clusters is not only caused by a bulk recombination increase but also by an increased back-surface recombination velocity.</dcterms:abstract>
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