Publikation:

Spatially resolved lifetimes in EFG and String Ribbon silicon after gettering and hydrogenation steps

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2002

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Geiger, Patric
Kragler, G.
Fath, Peter

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http://nbn-resolving.de/urn:nbn:de:bsz:352-2-1qjxrnmzqps2s8
DOI (zitierfähiger Link)
https://doi.org/10.1109/PVSC.2002.1190487
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Conference record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference - 2002 : Hyatt Regency New Orleans, New Orleans, Louisiana, May 19 - 24, 2002. Piscataway, NJ: IEEE, 2002, pp. 186-189. ISBN 0-7803-7471-1. Available under: doi: 10.1109/PVSC.2002.1190487

Zusammenfassung

Lifetime improvement in EFG and string ribbon silicon by gettering or defect passivation has been investigated by photoconductance decay. But in contrast to former studies measurements have been carried out in a spatially resolved way. In this way the mapping techniques have been found to be indespensable for an accurate study of processing steps' impact on material quality. This is due to very strong lifetime variations that have been measured throughout the wafer (between <1μs and >300μs), and because areas of the same starting quality have turned out to react very differently on applied processing steps. Consequently the results of integral measurements strongly depend on the nature of the areas incorporated in the specific sample. A statistical evaluation of the mapped lifetimes gives an impression of the uncertainties inherent to integral measurements.

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Fachgebiet (DDC)
530 Physik

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29th IEEE Photovoltaic Specialists Conference (PVSC), 19. Mai 2002 - 24. Mai 2002, New Orleans
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ISO 690GEIGER, Patric, G. KRAGLER, Giso HAHN, Peter FATH, Ernst BUCHER, 2002. Spatially resolved lifetimes in EFG and String Ribbon silicon after gettering and hydrogenation steps. 29th IEEE Photovoltaic Specialists Conference (PVSC). New Orleans, 19. Mai 2002 - 24. Mai 2002. In: Conference record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference - 2002 : Hyatt Regency New Orleans, New Orleans, Louisiana, May 19 - 24, 2002. Piscataway, NJ: IEEE, 2002, pp. 186-189. ISBN 0-7803-7471-1. Available under: doi: 10.1109/PVSC.2002.1190487
BibTex
@inproceedings{Geiger2002Spati-30948,
  year={2002},
  doi={10.1109/PVSC.2002.1190487},
  title={Spatially resolved lifetimes in EFG and String Ribbon silicon after gettering and hydrogenation steps},
  isbn={0-7803-7471-1},
  publisher={IEEE},
  address={Piscataway, NJ},
  booktitle={Conference record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference - 2002 : Hyatt Regency New Orleans, New Orleans, Louisiana, May 19 - 24, 2002},
  pages={186--189},
  author={Geiger, Patric and Kragler, G. and Hahn, Giso and Fath, Peter and Bucher, Ernst}
}
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