@article{Sperber2018-12Surfa-44658,
  year={2018},
  doi={10.1002/pssa.201800741},
  title={Bulk and Surface-Related Degradation in Lifetime Samples Made of Czochralski Silicon Passivated by Plasma-Enhanced Chemical Vapor Deposited Layer Stacks},
  number={24},
  volume={215},
  issn={1862-6319},
  journal={Physica Status Solidi (A) - Applications and Materials Science},
  author={Sperber, David and Schwarz, Anton and Herguth, Axel and Hahn, Giso},
  note={Article Number: 1800741}
}

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    <dc:creator>Herguth, Axel</dc:creator>
    <dcterms:title>Bulk and Surface-Related Degradation in Lifetime Samples Made of Czochralski Silicon Passivated by Plasma-Enhanced Chemical Vapor Deposited Layer Stacks</dcterms:title>
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    <dc:creator>Schwarz, Anton</dc:creator>
    <dc:creator>Hahn, Giso</dc:creator>
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    <dcterms:abstract xml:lang="eng">Significant bulk-related degradation (BRD) is followed by surface-related degradation (SRD) of effective excess charge carrier lifetime in lifetime samples made of Czochralski silicon during illuminated treatment at 80–150°C. Samples are passivated with either AlO&lt;sub&gt;x&lt;/sub&gt;:H/SiO&lt;sub&gt;x&lt;/sub&gt;N&lt;sub&gt;y&lt;/sub&gt;:H/SiN&lt;sub&gt;x&lt;/sub&gt;:H or SiO&lt;sub&gt;x&lt;/sub&gt;N&lt;sub&gt;y&lt;/sub&gt;:H/SiN&lt;sub&gt;x&lt;/sub&gt;:H stacks stemming entirely from plasma-enhanced chemical vapor deposition. Samples show strong variations in BRD depending on passivation stacks and treatment conditions, and a potential link to light and elevated temperature‐induced degradation (LeTID) is discussed. All samples are fired in a belt furnace, and variations of firing temperature and belt speed are shown to influence SRD slightly. SRD is furthermore accelerated with increasing treatment temperature and an apparent activation energy E&lt;sub&gt;app&lt;/sub&gt;=1.07±0.02eV is determined in SiO&lt;sub&gt;x&lt;/sub&gt;N&lt;sub&gt;y:&lt;/sub&gt;H/SiN&lt;sub&gt;x&lt;/sub&gt;:H passivated samples. Interpretation of E&lt;sub&gt;app&lt;/sub&gt; is, however, difficult as both changes in interfacial defect and fixed charge density occur in parallel during SRD.</dcterms:abstract>
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