Bulk and Surface-Related Degradation in Lifetime Samples Made of Czochralski Silicon Passivated by Plasma-Enhanced Chemical Vapor Deposited Layer Stacks

Lade...
Vorschaubild
Dateien
Sperber_2-1pu5i0t2e3buy1.pdf
Sperber_2-1pu5i0t2e3buy1.pdfGröße: 357.32 KBDownloads: 277
Datum
2018
Herausgeber:innen
Kontakt
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
ArXiv-ID
Internationale Patentnummer
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Green
Sammlungen
Core Facility der Universität Konstanz
Gesperrt bis
Titel in einer weiteren Sprache
Forschungsvorhaben
Organisationseinheiten
Zeitschriftenheft
Publikationstyp
Zeitschriftenartikel
Publikationsstatus
Published
Erschienen in
Zusammenfassung

Significant bulk-related degradation (BRD) is followed by surface-related degradation (SRD) of effective excess charge carrier lifetime in lifetime samples made of Czochralski silicon during illuminated treatment at 80–150°C. Samples are passivated with either AlOx:H/SiOxNy:H/SiNx:H or SiOxNy:H/SiNx:H stacks stemming entirely from plasma-enhanced chemical vapor deposition. Samples show strong variations in BRD depending on passivation stacks and treatment conditions, and a potential link to light and elevated temperature‐induced degradation (LeTID) is discussed. All samples are fired in a belt furnace, and variations of firing temperature and belt speed are shown to influence SRD slightly. SRD is furthermore accelerated with increasing treatment temperature and an apparent activation energy Eapp=1.07±0.02eV is determined in SiOxNy:H/SiNx:H passivated samples. Interpretation of Eapp is, however, difficult as both changes in interfacial defect and fixed charge density occur in parallel during SRD.

Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
Konferenz
Rezension
undefined / . - undefined, undefined
Zitieren
ISO 690SPERBER, David, Anton SCHWARZ, Axel HERGUTH, Giso HAHN, 2018. Bulk and Surface-Related Degradation in Lifetime Samples Made of Czochralski Silicon Passivated by Plasma-Enhanced Chemical Vapor Deposited Layer Stacks. In: Physica Status Solidi (A) - Applications and Materials Science. 2018, 215(24), 1800741. ISSN 1862-6319. eISSN 1862-6300. Available under: doi: 10.1002/pssa.201800741
BibTex
@article{Sperber2018-12Surfa-44658,
  year={2018},
  doi={10.1002/pssa.201800741},
  title={Bulk and Surface-Related Degradation in Lifetime Samples Made of Czochralski Silicon Passivated by Plasma-Enhanced Chemical Vapor Deposited Layer Stacks},
  number={24},
  volume={215},
  issn={1862-6319},
  journal={Physica Status Solidi (A) - Applications and Materials Science},
  author={Sperber, David and Schwarz, Anton and Herguth, Axel and Hahn, Giso},
  note={Article Number: 1800741}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/44658">
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dc:rights>terms-of-use</dc:rights>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/44658"/>
    <dc:creator>Herguth, Axel</dc:creator>
    <dcterms:title>Bulk and Surface-Related Degradation in Lifetime Samples Made of Czochralski Silicon Passivated by Plasma-Enhanced Chemical Vapor Deposited Layer Stacks</dcterms:title>
    <dcterms:issued>2018-12</dcterms:issued>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/44658/1/Sperber_2-1pu5i0t2e3buy1.pdf"/>
    <dc:creator>Schwarz, Anton</dc:creator>
    <dc:creator>Hahn, Giso</dc:creator>
    <dc:contributor>Sperber, David</dc:contributor>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Sperber, David</dc:creator>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-01-22T10:57:42Z</dc:date>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/44658/1/Sperber_2-1pu5i0t2e3buy1.pdf"/>
    <dc:language>eng</dc:language>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-01-22T10:57:42Z</dcterms:available>
    <dc:contributor>Schwarz, Anton</dc:contributor>
    <dc:contributor>Herguth, Axel</dc:contributor>
    <dcterms:abstract xml:lang="eng">Significant bulk-related degradation (BRD) is followed by surface-related degradation (SRD) of effective excess charge carrier lifetime in lifetime samples made of Czochralski silicon during illuminated treatment at 80–150°C. Samples are passivated with either AlO&lt;sub&gt;x&lt;/sub&gt;:H/SiO&lt;sub&gt;x&lt;/sub&gt;N&lt;sub&gt;y&lt;/sub&gt;:H/SiN&lt;sub&gt;x&lt;/sub&gt;:H or SiO&lt;sub&gt;x&lt;/sub&gt;N&lt;sub&gt;y&lt;/sub&gt;:H/SiN&lt;sub&gt;x&lt;/sub&gt;:H stacks stemming entirely from plasma-enhanced chemical vapor deposition. Samples show strong variations in BRD depending on passivation stacks and treatment conditions, and a potential link to light and elevated temperature‐induced degradation (LeTID) is discussed. All samples are fired in a belt furnace, and variations of firing temperature and belt speed are shown to influence SRD slightly. SRD is furthermore accelerated with increasing treatment temperature and an apparent activation energy E&lt;sub&gt;app&lt;/sub&gt;=1.07±0.02eV is determined in SiO&lt;sub&gt;x&lt;/sub&gt;N&lt;sub&gt;y:&lt;/sub&gt;H/SiN&lt;sub&gt;x&lt;/sub&gt;:H passivated samples. Interpretation of E&lt;sub&gt;app&lt;/sub&gt; is, however, difficult as both changes in interfacial defect and fixed charge density occur in parallel during SRD.</dcterms:abstract>
  </rdf:Description>
</rdf:RDF>
Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Kontakt
URL der Originalveröffentl.
Prüfdatum der URL
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Ja
Diese Publikation teilen