Finite Element Simulation of the Local Al/Si Contact Formation

Kurzanzeige
dc.contributor.authorHerguth, Axel
dc.date.accessioned2017-02-20T14:19:27Z
dc.date.available2017-02-20T14:19:27Z
dc.date.issued2016-08eng
dc.description.abstractThe formation of local Al/Si contacts, as found in PERC type cells, was evaluated by finite element simulation based on a model of Si diffusion in the molten Al layer as well as dissolution and recrystallization of Si at the liquid/solid interface. In accordance with experimental observations the simulations reproduce the characteristic lateral spread of Si in the Al layer, the different cavity shapes (ranging from round to ω-shaped cavities) as well as the development of the Al-doped recrystallized region which forms the high-low junction to the lower doped substrate responsible for the back surface field passivation.eng
dc.description.versionpublishedeng
dc.identifier.doi10.1016/j.egypro.2016.07.018eng
dc.identifier.ppn483629499
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/37598
dc.language.isoengeng
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectAl/Si contact formation; local contacts; PERCeng
dc.subject.ddc530eng
dc.titleFinite Element Simulation of the Local Al/Si Contact Formationeng
dc.typeJOURNAL_ARTICLEeng
dspace.entity.typePublication
kops.citation.bibtex
@article{Herguth2016-08Finit-37598,
  year={2016},
  doi={10.1016/j.egypro.2016.07.018},
  title={Finite Element Simulation of the Local Al/Si Contact Formation},
  volume={92},
  journal={Energy Procedia},
  pages={75--81},
  author={Herguth, Axel}
}
kops.citation.iso690HERGUTH, Axel, 2016. Finite Element Simulation of the Local Al/Si Contact Formation. In: Energy Procedia. 2016, 92, pp. 75-81. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2016.07.018deu
kops.citation.iso690HERGUTH, Axel, 2016. Finite Element Simulation of the Local Al/Si Contact Formation. In: Energy Procedia. 2016, 92, pp. 75-81. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2016.07.018eng
kops.citation.rdf
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/37598">
    <dcterms:title>Finite Element Simulation of the Local Al/Si Contact Formation</dcterms:title>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:creator>Herguth, Axel</dc:creator>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:language>eng</dc:language>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/37598"/>
    <dc:contributor>Herguth, Axel</dc:contributor>
    <dcterms:abstract xml:lang="eng">The formation of local Al/Si contacts, as found in PERC type cells, was evaluated by finite element simulation based on a model of Si diffusion in the molten Al layer as well as dissolution and recrystallization of Si at the liquid/solid interface. In accordance with experimental observations the simulations reproduce the characteristic lateral spread of Si in the Al layer, the different cavity shapes (ranging from round to ω-shaped cavities) as well as the development of the Al-doped recrystallized region which forms the high-low junction to the lower doped substrate responsible for the back surface field passivation.</dcterms:abstract>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2017-02-20T14:19:27Z</dcterms:available>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/37598/1/Herguth_0-373248.pdf"/>
    <dc:rights>Attribution-NonCommercial-NoDerivatives 4.0 International</dc:rights>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2017-02-20T14:19:27Z</dc:date>
    <dcterms:issued>2016-08</dcterms:issued>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/4.0/"/>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/37598/1/Herguth_0-373248.pdf"/>
  </rdf:Description>
</rdf:RDF>
kops.description.openAccessopenaccessgoldeng
kops.flag.knbibliographytrue
kops.identifier.nbnurn:nbn:de:bsz:352-0-373248
kops.sourcefieldEnergy Procedia. 2016, <b>92</b>, pp. 75-81. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2016.07.018deu
kops.sourcefield.plainEnergy Procedia. 2016, 92, pp. 75-81. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2016.07.018deu
kops.sourcefield.plainEnergy Procedia. 2016, 92, pp. 75-81. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2016.07.018eng
relation.isAuthorOfPublication1ab265ef-6078-4a9d-a66b-bcaaf18e5b4e
relation.isAuthorOfPublication.latestForDiscovery1ab265ef-6078-4a9d-a66b-bcaaf18e5b4e
source.bibliographicInfo.fromPage75eng
source.bibliographicInfo.toPage81eng
source.bibliographicInfo.volume92eng
source.identifier.eissn1876-6102eng
source.periodicalTitleEnergy Procediaeng

Dateien

Originalbündel

Gerade angezeigt 1 - 1 von 1
Vorschaubild nicht verfügbar
Name:
Herguth_0-373248.pdf
Größe:
421.29 KB
Format:
Adobe Portable Document Format
Beschreibung:
Herguth_0-373248.pdf
Herguth_0-373248.pdfGröße: 421.29 KBDownloads: 252

Lizenzbündel

Gerade angezeigt 1 - 1 von 1
Vorschaubild nicht verfügbar
Name:
license.txt
Größe:
3.88 KB
Format:
Item-specific license agreed upon to submission
Beschreibung:
license.txt
license.txtGröße: 3.88 KBDownloads: 0

Sammlungen

Physik: Publikationen