Publikation:

Finite Element Simulation of the Local Al/Si Contact Formation

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Herguth_0-373248.pdf
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2016

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http://nbn-resolving.de/urn:nbn:de:bsz:352-0-373248
DOI (zitierfähiger Link)
https://doi.org/10.1016/j.egypro.2016.07.018
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CC BY-NC-ND 4.0

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Open Access-Veröffentlichung
Open Access Gold

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Physik: Publikationen
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Published

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Energy Procedia. 2016, 92, pp. 75-81. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2016.07.018

Zusammenfassung

The formation of local Al/Si contacts, as found in PERC type cells, was evaluated by finite element simulation based on a model of Si diffusion in the molten Al layer as well as dissolution and recrystallization of Si at the liquid/solid interface. In accordance with experimental observations the simulations reproduce the characteristic lateral spread of Si in the Al layer, the different cavity shapes (ranging from round to ω-shaped cavities) as well as the development of the Al-doped recrystallized region which forms the high-low junction to the lower doped substrate responsible for the back surface field passivation.

Zusammenfassung in einer weiteren Sprache

Fachgebiet (DDC)
530 Physik

Schlagwörter

Al/Si contact formation; local contacts; PERC

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ISO 690HERGUTH, Axel, 2016. Finite Element Simulation of the Local Al/Si Contact Formation. In: Energy Procedia. 2016, 92, pp. 75-81. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2016.07.018
BibTex
@article{Herguth2016-08Finit-37598,
  year={2016},
  doi={10.1016/j.egypro.2016.07.018},
  title={Finite Element Simulation of the Local Al/Si Contact Formation},
  volume={92},
  journal={Energy Procedia},
  pages={75--81},
  author={Herguth, Axel}
}
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