Charge transport through a single-electron transistor with a mechanically oscillating island

dc.contributor.authorChtchelkatchev, Nikolai M.deu
dc.contributor.authorBelzig, Wolfgang
dc.contributor.authorBruder, Christophdeu
dc.date.accessioned2011-03-24T14:52:39Zdeu
dc.date.available2011-03-24T14:52:39Zdeu
dc.date.issued2004deu
dc.description.abstractWe consider a single-electron transistor (SET) whose central island is a nanomechanical oscillator. The gate capacitance of the SET depends on the mechanical displacement, thus, the vibrations of the island may influence the transport properties. Harmonic oscillations of the island and thermal vibrations change the transport characteristics in different ways. The changes in the Coulomb blockade oscillations and in the current noise spectral density help to determine in what way the island oscillates, and allow to estimate the amplitude and the frequency of the oscillations.eng
dc.description.versionpublished
dc.format.mimetypeapplication/pdfdeu
dc.identifier.citationFirst publ. in: Physical Review B, 70 (2004), Article 193305deu
dc.identifier.doi10.1103/PhysRevB.70.193305
dc.identifier.ppn267297610deu
dc.identifier.urihttp://kops.uni-konstanz.de/handle/123456789/5036
dc.language.isoengdeu
dc.legacy.dateIssued2007deu
dc.rightsAttribution-NonCommercial-NoDerivs 2.0 Generic
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/
dc.subject.ddc530deu
dc.subject.pacs85.35.-pdeu
dc.subject.pacs72.70.+mdeu
dc.subject.pacs73.23.Hkdeu
dc.titleCharge transport through a single-electron transistor with a mechanically oscillating islandeng
dc.typeJOURNAL_ARTICLEdeu
dspace.entity.typePublication
kops.citation.bibtex
@article{Chtchelkatchev2004Charg-5036,
  year={2004},
  doi={10.1103/PhysRevB.70.193305},
  title={Charge transport through a single-electron transistor with a mechanically oscillating island},
  volume={70},
  journal={Physical Review B},
  author={Chtchelkatchev, Nikolai M. and Belzig, Wolfgang and Bruder, Christoph},
  note={Article Number: 193305}
}
kops.citation.iso690CHTCHELKATCHEV, Nikolai M., Wolfgang BELZIG, Christoph BRUDER, 2004. Charge transport through a single-electron transistor with a mechanically oscillating island. In: Physical Review B. 2004, 70, 193305. Available under: doi: 10.1103/PhysRevB.70.193305deu
kops.citation.iso690CHTCHELKATCHEV, Nikolai M., Wolfgang BELZIG, Christoph BRUDER, 2004. Charge transport through a single-electron transistor with a mechanically oscillating island. In: Physical Review B. 2004, 70, 193305. Available under: doi: 10.1103/PhysRevB.70.193305eng
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kops.sourcefield.plainPhysical Review B. 2004, 70, 193305. Available under: doi: 10.1103/PhysRevB.70.193305deu
kops.sourcefield.plainPhysical Review B. 2004, 70, 193305. Available under: doi: 10.1103/PhysRevB.70.193305eng
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