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Dispersive readout of valley splittings in cavity-coupled silicon quantum dots

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2016

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Petta, Jason R.

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https://doi.org/10.1103/PhysRevB.94.195305
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http://arxiv.org/abs/1607.08801

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Physical Review B. 2016, 94(19), 195305. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.94.195305

Zusammenfassung

The band structure of bulk silicon has a six-fold valley degeneracy. Strain in the Si/SiGe quantum well system partially lifts the valley degeneracy, but the materials factors that set the splitting of the two lowest lying valleys are still under intense investigation. We propose a method for accurately determining the valley splitting in Si/SiGe double quantum dots embedded into a superconducting microwave resonator. We show that low lying valley states in the double quantum dot energy level spectrum lead to readily observable features in the cavity transmission. These features generate a "fingerprint" of the microscopic energy level structure of a semiconductor double quantum dot, providing useful information on valley splittings and intervalley coupling rates.

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ISO 690BURKARD, Guido, Jason R. PETTA, 2016. Dispersive readout of valley splittings in cavity-coupled silicon quantum dots. In: Physical Review B. 2016, 94(19), 195305. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.94.195305
BibTex
@article{Burkard2016-07-29T13:30:11ZDispe-36045,
  year={2016},
  doi={10.1103/PhysRevB.94.195305},
  title={Dispersive readout of valley splittings in cavity-coupled silicon quantum dots},
  number={19},
  volume={94},
  issn={2469-9950},
  journal={Physical Review B},
  author={Burkard, Guido and Petta, Jason R.},
  note={Article Number: 195305}
}
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