Publikation: Controlling spin in an electronic interferometer with spin-active interfaces
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2006
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Europhysics Letters. 2006, 74(25), pp. 320-326. Available under: doi: 10.1209/epl/i2006-10006-0
Zusammenfassung
We consider electronic current transport through a ballistic one-dimensional quantum wire connected to two ferromagnetic leads. We study the effects of the spin-dependence of interfacial phase shifts (SDIPS) acquired by electrons upon scattering at the boundaries of the wire. The SDIPS produces a spin-splitting of the wire resonant energies which is tunable with the gate voltage and the angle between the ferromagnetic polarizations. This property could be used for manipulating spins. In particular, it leads to a giant magnetoresistance effect with a sign tunable with the gate voltage and the magnetic field applied to the wire.
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COTTET, Audrey, Takis KONTOS, Wolfgang BELZIG, Christian SCHÖNENBERGER, Christoph BRUDER, 2006. Controlling spin in an electronic interferometer with spin-active interfaces. In: Europhysics Letters. 2006, 74(25), pp. 320-326. Available under: doi: 10.1209/epl/i2006-10006-0BibTex
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year={2006},
doi={10.1209/epl/i2006-10006-0},
title={Controlling spin in an electronic interferometer with spin-active interfaces},
number={25},
volume={74},
journal={Europhysics Letters},
pages={320--326},
author={Cottet, Audrey and Kontos, Takis and Belzig, Wolfgang and Schönenberger, Christian and Bruder, Christoph}
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<dcterms:abstract xml:lang="eng">We consider electronic current transport through a ballistic one-dimensional quantum wire connected to two ferromagnetic leads. We study the effects of the spin-dependence of interfacial phase shifts (SDIPS) acquired by electrons upon scattering at the boundaries of the wire. The SDIPS produces a spin-splitting of the wire resonant energies which is tunable with the gate voltage and the angle between the ferromagnetic polarizations. This property could be used for manipulating spins. In particular, it leads to a giant magnetoresistance effect with a sign tunable with the gate voltage and the magnetic field applied to the wire.</dcterms:abstract>
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