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DX-behavior of Si in AlN

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2000

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Zeisel, Roland
Bayerl, Martin W.
Dimitrov, Roman
Ambacher, Oliver
Brandt, Martin S.
Stutzmann, Martin

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https://doi.org/10.1103/PhysRevB.61.R16283
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Physical Review B. American Physical Society (APS). 2000, 61(24), R16283. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.61.R16283

Zusammenfassung

In Si doped AlN, a large persistent photoconductivity is found for temperatures below 60 K after exposure to light with photon energies above 1.5 eV. Simultaneously, a persistent electron spin resonance signal is observed with an isotropic g factor of 1.9885 due to an effective mass donor state, while no spin resonance signal is detectable after cooling the sample in the dark. Both observations show that Si undergoes a DX-like metastability in this material. Based on the experimental findings, a detailed configuration diagram is proposed.

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ISO 690ZEISEL, Roland, Martin W. BAYERL, Sebastian T. B. GOENNENWEIN, Roman DIMITROV, Oliver AMBACHER, Martin S. BRANDT, Martin STUTZMANN, 2000. DX-behavior of Si in AlN. In: Physical Review B. American Physical Society (APS). 2000, 61(24), R16283. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.61.R16283
BibTex
@article{Zeisel2000DXbeh-52804,
  year={2000},
  doi={10.1103/PhysRevB.61.R16283},
  title={DX-behavior of Si in AlN},
  number={24},
  volume={61},
  issn={2469-9950},
  journal={Physical Review B},
  author={Zeisel, Roland and Bayerl, Martin W. and Goennenwein, Sebastian T. B. and Dimitrov, Roman and Ambacher, Oliver and Brandt, Martin S. and Stutzmann, Martin},
  note={Article Number: R16283}
}
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