Publikation: Electric dipole spin resonance in systems with a valley dependent g-factor
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In this theoretical study we qualitatively and quantitatively investigate the electric dipole spin resonance (EDSR) in a single Si/SiGe quantum dot in the presence of a magnetic field gradient, e.g., produced by a ferromagnet. We model a situation in which the control of electron spin states is achieved by applying an oscillatory electric field, inducing real-space oscillations of the electron inside the quantum dot. One of the goals of our study is to present a microscopic theory of valley dependent $g$-factors in Si/SiGe quantum dots and investigate how valley relaxation combined with a valley dependent $g$-factor leads to a novel electron spin dephasing mechanism. Furthermore, we discuss the interplay of spin and valley relaxations in Si/SiGe quantum dots. Our findings suggest that the electron spin dephases due to valley relaxation, and are in agreement with recent experimental studies [Nature Nanotechnology 9, 666-670 (2014)].
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RANCIC, Marko J., Guido BURKARD, 2016. Electric dipole spin resonance in systems with a valley dependent g-factor. In: Physical Review B. 2016, 93(20), 205433. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.93.205433BibTex
@article{Rancic2016Elect-34901, year={2016}, doi={10.1103/PhysRevB.93.205433}, title={Electric dipole spin resonance in systems with a valley dependent g-factor}, number={20}, volume={93}, issn={2469-9950}, journal={Physical Review B}, author={Rancic, Marko J. and Burkard, Guido}, note={9 pages, 9 figures Article Number: 205433} }
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