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Electric dipole spin resonance in systems with a valley dependent g-factor

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2016

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Physical Review B. 2016, 93(20), 205433. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.93.205433

Zusammenfassung

In this theoretical study we qualitatively and quantitatively investigate the electric dipole spin resonance (EDSR) in a single Si/SiGe quantum dot in the presence of a magnetic field gradient, e.g., produced by a ferromagnet. We model a situation in which the control of electron spin states is achieved by applying an oscillatory electric field, inducing real-space oscillations of the electron inside the quantum dot. One of the goals of our study is to present a microscopic theory of valley dependent $g$-factors in Si/SiGe quantum dots and investigate how valley relaxation combined with a valley dependent $g$-factor leads to a novel electron spin dephasing mechanism. Furthermore, we discuss the interplay of spin and valley relaxations in Si/SiGe quantum dots. Our findings suggest that the electron spin dephases due to valley relaxation, and are in agreement with recent experimental studies [Nature Nanotechnology 9, 666-670 (2014)].

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ISO 690RANCIC, Marko J., Guido BURKARD, 2016. Electric dipole spin resonance in systems with a valley dependent g-factor. In: Physical Review B. 2016, 93(20), 205433. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.93.205433
BibTex
@article{Rancic2016Elect-34901,
  year={2016},
  doi={10.1103/PhysRevB.93.205433},
  title={Electric dipole spin resonance in systems with a valley dependent g-factor},
  number={20},
  volume={93},
  issn={2469-9950},
  journal={Physical Review B},
  author={Rancic, Marko J. and Burkard, Guido},
  note={9 pages, 9 figures Article Number: 205433}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/34901">
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:issued>2016</dcterms:issued>
    <dcterms:title>Electric dipole spin resonance in systems with a valley dependent g-factor</dcterms:title>
    <dc:contributor>Rancic, Marko J.</dc:contributor>
    <dc:contributor>Burkard, Guido</dc:contributor>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2016-07-28T12:41:00Z</dcterms:available>
    <dc:language>eng</dc:language>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2016-07-28T12:41:00Z</dc:date>
    <dcterms:abstract xml:lang="eng">In this theoretical study we qualitatively and quantitatively investigate the electric dipole spin resonance (EDSR) in a single Si/SiGe quantum dot in the presence of a magnetic field gradient, e.g., produced by a ferromagnet. We model a situation in which the control of electron spin states is achieved by applying an oscillatory electric field, inducing real-space oscillations of the electron inside the quantum dot. One of the goals of our study is to present a microscopic theory of valley dependent $g$-factors in Si/SiGe quantum dots and investigate how valley relaxation combined with a valley dependent $g$-factor leads to a novel electron spin dephasing mechanism. Furthermore, we discuss the interplay of spin and valley relaxations in Si/SiGe quantum dots. Our findings suggest that the electron spin dephases due to valley relaxation, and are in agreement with recent experimental studies [Nature Nanotechnology 9, 666-670 (2014)].</dcterms:abstract>
    <dc:creator>Rancic, Marko J.</dc:creator>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/34901"/>
    <dc:creator>Burkard, Guido</dc:creator>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
  </rdf:Description>
</rdf:RDF>

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xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter

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9 pages, 9 figures
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