Al–Si alloy formation in narrow p-type Si contact areas for rear passivated solar cells

Urrejola, Elias; Peter, Kristian; Plagwitz, Heiko; Schubert, Gunnar

Al–Si alloy formation in narrow p-type Si contact areas for rear passivated solar cells

Files

There are no files associated with this item.

Date

2010

Authors

Urrejola, Elias

Peter, Kristian

Plagwitz, Heiko

Schubert, Gunnar

Publication type

Journal article

Published in

Journal of Applied Physics ; 107 (2010), 12. - 124516. - ISSN 0021-8979

Abstract

For high efficiency silicon solar cells, the rear surface passivation by a dielectric layer has significant advantages compared to the standard fully covered Al back-contact structure. In this work the rear contact formation of the passivated emitter and rear cell device structure is analyzed. Contrary to expected views, we found that the contact resistivity of fine screen printed Al fingers alloyed on narrow p-type Si areas depends on the geometry of the Al–Si alloy formation below the contacts, and decreases by reducing the contact area, while the contact resistance remains constant. At the solar cell level, the reduction in the contact resistivity leads to a minimization of the fill factor losses. At the same time, narrow Al–Si alloy formations increased the passivated area below the contacts, improving the optical properties of the rear side, reducing the short-circuit current and open-circuit voltage losses. Scanning electron microscopy analysis of the Al–Si alloy geometry is performed, in order to understand its influence on the contact resistivity. The analysis presented in this article has application in Al–Si alloying processes and advanced solar cells concepts, like back-contact and rear passivated solar cells.

Subject (DDC)

530 Physics

Keywords

solar cells,silicon alloys,aluminum,aluminium,alloys,compounds,gravity,sintering,contact resistance,chemical interdiffusion,firing (materials),dielectric thin films,passivation,protective coating,scanning electron microscopy,back-surface-field,voids (solid),kirkendall effect

Cite This

ISO 690

URREJOLA, Elias, Kristian PETER, Heiko PLAGWITZ, Gunnar SCHUBERT, 2010. Al–Si alloy formation in narrow p-type Si contact areas for rear passivated solar cells. In: Journal of Applied Physics. 107(12), 124516. ISSN 0021-8979. Available under: doi: 10.1063/1.3437070

BibTex

@article{Urrejola2010alloy-19493,
  year={2010},
  doi={10.1063/1.3437070},
  title={Al–Si alloy formation in narrow p-type Si contact areas for rear passivated solar cells},
  number={12},
  volume={107},
  issn={0021-8979},
  journal={Journal of Applied Physics},
  author={Urrejola, Elias and Peter, Kristian and Plagwitz, Heiko and Schubert, Gunnar},
  note={Article Number: 124516}
}

RDF

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/19493">
    <dcterms:abstract xml:lang="eng">For high efficiency silicon solar cells, the rear surface passivation by a dielectric layer has significant advantages compared to the standard fully covered Al back-contact structure. In this work the rear contact formation of the passivated emitter and rear cell device structure is analyzed. Contrary to expected views, we found that the contact resistivity of fine screen printed Al fingers alloyed on narrow p-type Si areas depends on the geometry of the Al–Si alloy formation below the contacts, and decreases by reducing the contact area, while the contact resistance remains constant. At the solar cell level, the reduction in the contact resistivity leads to a minimization of the fill factor losses. At the same time, narrow Al–Si alloy formations increased the passivated area below the contacts, improving the optical properties of the rear side, reducing the short-circuit current and open-circuit voltage losses. Scanning electron microscopy analysis of the Al–Si alloy geometry is performed, in order to understand its influence on the contact resistivity. The analysis presented in this article has application in Al–Si alloying processes and advanced solar cells concepts, like back-contact and rear passivated solar cells.</dcterms:abstract>
    <dc:contributor>Urrejola, Elias</dc:contributor>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Plagwitz, Heiko</dc:contributor>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/19493"/>
    <dc:creator>Plagwitz, Heiko</dc:creator>
    <dc:creator>Schubert, Gunnar</dc:creator>
    <dc:creator>Peter, Kristian</dc:creator>
    <dcterms:bibliographicCitation>Publ. in: Journal of Applied Physics ; 107 (2010), 12. - 124516</dcterms:bibliographicCitation>
    <dc:creator>Urrejola, Elias</dc:creator>
    <dc:language>eng</dc:language>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:rights>terms-of-use</dc:rights>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/29"/>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/29"/>
    <dc:contributor>Peter, Kristian</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:contributor>Schubert, Gunnar</dc:contributor>
    <dcterms:title>Al–Si alloy formation in narrow p-type Si contact areas for rear passivated solar cells</dcterms:title>
    <dcterms:issued>2010</dcterms:issued>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2012-06-14T20:10:11Z</dcterms:available>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2012-06-14T20:10:11Z</dc:date>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
  </rdf:Description>
</rdf:RDF>