Publikation: Enhanced oxidation of thermally grown SiO2 due to P precipitates
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2016
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Energy Procedia. 2016, 92, pp. 457-465. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2016.07.127
Zusammenfassung
Previous studies of thermal oxidation on a doped structure showed that growth of thermal SiO2 depends on the charge carrier concentration. Here we show that growth behavior of a thermal SiO2 layer also depends strongly on the emitter’s electrically nonactive P concentration. Experimental data show that an increase in P precipitate concentration has a significant influence on the growth kinetics of thermally grown SiO2 layers. Despite constant charge carrier concentration in the emitter, an increase in growth rate up to a factor of 2 was measured in samples with increased inactive P concentration. Quantitative elemental analysis of the thermally grown SiO2 layers further shows that the SiO2 composition can be strongly influenced by the Si substrate’s inactive P concentration.
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DASTGHEIB-SHIRAZI, Amir, Johannes RINDER, Gabriel MICARD, Michael STEYER, Barbara TERHEIDEN, Giso HAHN, 2016. Enhanced oxidation of thermally grown SiO2 due to P precipitates. In: Energy Procedia. 2016, 92, pp. 457-465. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2016.07.127BibTex
@article{DastgheibShirazi2016Enhan-36120,
year={2016},
doi={10.1016/j.egypro.2016.07.127},
title={Enhanced oxidation of thermally grown SiO<sub>2</sub> due to P precipitates},
volume={92},
journal={Energy Procedia},
pages={457--465},
author={Dastgheib-Shirazi, Amir and Rinder, Johannes and Micard, Gabriel and Steyer, Michael and Terheiden, Barbara and Hahn, Giso}
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<dcterms:abstract xml:lang="eng">Previous studies of thermal oxidation on a doped structure showed that growth of thermal SiO<sub>2</sub> depends on the charge carrier concentration. Here we show that growth behavior of a thermal SiO<sub>2</sub> layer also depends strongly on the emitter’s electrically nonactive P concentration. Experimental data show that an increase in P precipitate concentration has a significant influence on the growth kinetics of thermally grown SiO<sub>2</sub> layers. Despite constant charge carrier concentration in the emitter, an increase in growth rate up to a factor of 2 was measured in samples with increased inactive P concentration. Quantitative elemental analysis of the thermally grown SiO<sub>2</sub> layers further shows that the SiO<sub>2</sub> composition can be strongly influenced by the Si substrate’s inactive P concentration.</dcterms:abstract>
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