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Bound-exciton-induced current bistability in a silicon light-emitting diode

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2003

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Sun, Jiaming
Skorupa, Wolfgang
Schmidt, Bernd
Helm, Manfred

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Applied Physics Letters. 2003, 82, pp. 2823-2825. Available under: doi: 10.1063/1.1570920

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A bound-exciton-induced current bistability is observed under forward bias in an efficient silicon light-emitting diode at low temperatures. Two stable states of the S-type differential conductivity correspond to empty and filled states of bound excitons, respectively. The relationship between the current voltage characteristic and the bound-exciton population can be accounted for using a rate equation model for bound and free excitons. The consistency between the theoretical and experimental results indicates that bound excitons, despite their neutral-charged states, contribute to the current bistability in silicon p n junction diodes.

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ISO 690SUN, Jiaming, Thomas DEKORSY, Wolfgang SKORUPA, Bernd SCHMIDT, Manfred HELM, 2003. Bound-exciton-induced current bistability in a silicon light-emitting diode. In: Applied Physics Letters. 2003, 82, pp. 2823-2825. Available under: doi: 10.1063/1.1570920
BibTex
@article{Sun2003Bound-5074,
  year={2003},
  doi={10.1063/1.1570920},
  title={Bound-exciton-induced current bistability in a silicon light-emitting diode},
  volume={82},
  journal={Applied Physics Letters},
  pages={2823--2825},
  author={Sun, Jiaming and Dekorsy, Thomas and Skorupa, Wolfgang and Schmidt, Bernd and Helm, Manfred}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/5074">
    <dc:contributor>Schmidt, Bernd</dc:contributor>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:language>eng</dc:language>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:52:56Z</dc:date>
    <dcterms:abstract xml:lang="eng">A bound-exciton-induced current bistability is observed under forward bias in an efficient silicon light-emitting diode at low temperatures. Two stable states of the S-type differential conductivity correspond to empty and filled states of bound excitons, respectively. The relationship between the current voltage characteristic and the bound-exciton population can be accounted for using a rate equation model for bound and free excitons. The consistency between the theoretical and experimental results indicates that bound excitons, despite their neutral-charged states, contribute to the current bistability in silicon p n junction diodes.</dcterms:abstract>
    <dcterms:issued>2003</dcterms:issued>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Skorupa, Wolfgang</dc:creator>
    <dc:contributor>Skorupa, Wolfgang</dc:contributor>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/5074/1/Bound_exciton_induced_current_bistability_in_a_silicon_light_emitting_diode.pdf"/>
    <dc:creator>Dekorsy, Thomas</dc:creator>
    <dc:creator>Sun, Jiaming</dc:creator>
    <dcterms:bibliographicCitation>First publ. in: Applied Physics Letters 82 (2003), pp. 2823-2825</dcterms:bibliographicCitation>
    <dc:creator>Schmidt, Bernd</dc:creator>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:52:56Z</dcterms:available>
    <dc:creator>Helm, Manfred</dc:creator>
    <dc:contributor>Sun, Jiaming</dc:contributor>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/5074"/>
    <dcterms:title>Bound-exciton-induced current bistability in a silicon light-emitting diode</dcterms:title>
    <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/2.0/"/>
    <dc:contributor>Helm, Manfred</dc:contributor>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/5074/1/Bound_exciton_induced_current_bistability_in_a_silicon_light_emitting_diode.pdf"/>
    <dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights>
    <dc:format>application/pdf</dc:format>
    <dc:contributor>Dekorsy, Thomas</dc:contributor>
  </rdf:Description>
</rdf:RDF>

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xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter

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