Publikation:

Bound-exciton-induced current bistability in a silicon light-emitting diode

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Bound_exciton_induced_current_bistability_in_a_silicon_light_emitting_diode.pdf
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2003

Autor:innen

Sun, Jiaming
Skorupa, Wolfgang
Schmidt, Bernd
Helm, Manfred

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http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-44938
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https://doi.org/10.1063/1.1570920
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Attribution-NonCommercial-NoDerivs 2.0 Generic

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Open Access Green

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Applied Physics Letters. 2003, 82, pp. 2823-2825. Available under: doi: 10.1063/1.1570920

Zusammenfassung

A bound-exciton-induced current bistability is observed under forward bias in an efficient silicon light-emitting diode at low temperatures. Two stable states of the S-type differential conductivity correspond to empty and filled states of bound excitons, respectively. The relationship between the current voltage characteristic and the bound-exciton population can be accounted for using a rate equation model for bound and free excitons. The consistency between the theoretical and experimental results indicates that bound excitons, despite their neutral-charged states, contribute to the current bistability in silicon p n junction diodes.

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530 Physik

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ISO 690SUN, Jiaming, Thomas DEKORSY, Wolfgang SKORUPA, Bernd SCHMIDT, Manfred HELM, 2003. Bound-exciton-induced current bistability in a silicon light-emitting diode. In: Applied Physics Letters. 2003, 82, pp. 2823-2825. Available under: doi: 10.1063/1.1570920
BibTex
@article{Sun2003Bound-5074,
  year={2003},
  doi={10.1063/1.1570920},
  title={Bound-exciton-induced current bistability in a silicon light-emitting diode},
  volume={82},
  journal={Applied Physics Letters},
  pages={2823--2825},
  author={Sun, Jiaming and Dekorsy, Thomas and Skorupa, Wolfgang and Schmidt, Bernd and Helm, Manfred}
}
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