Publikation: Bound-exciton-induced current bistability in a silicon light-emitting diode
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2003
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Applied Physics Letters. 2003, 82, pp. 2823-2825. Available under: doi: 10.1063/1.1570920
Zusammenfassung
A bound-exciton-induced current bistability is observed under forward bias in an efficient silicon light-emitting diode at low temperatures. Two stable states of the S-type differential conductivity correspond to empty and filled states of bound excitons, respectively. The relationship between the current voltage characteristic and the bound-exciton population can be accounted for using a rate equation model for bound and free excitons. The consistency between the theoretical and experimental results indicates that bound excitons, despite their neutral-charged states, contribute to the current bistability in silicon p n junction diodes.
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530 Physik
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SUN, Jiaming, Thomas DEKORSY, Wolfgang SKORUPA, Bernd SCHMIDT, Manfred HELM, 2003. Bound-exciton-induced current bistability in a silicon light-emitting diode. In: Applied Physics Letters. 2003, 82, pp. 2823-2825. Available under: doi: 10.1063/1.1570920BibTex
@article{Sun2003Bound-5074, year={2003}, doi={10.1063/1.1570920}, title={Bound-exciton-induced current bistability in a silicon light-emitting diode}, volume={82}, journal={Applied Physics Letters}, pages={2823--2825}, author={Sun, Jiaming and Dekorsy, Thomas and Skorupa, Wolfgang and Schmidt, Bernd and Helm, Manfred} }
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