Publikation: Silicon diffusion in aluminum for rear passivated solar cells
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2011
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Applied Physics Letters. 2011, 98(15), 153508. ISSN 0003-6951. Available under: doi: 10.1063/1.3579541
Zusammenfassung
We show that the lateral spread of silicon in a screen-printed aluminum layer increases by (1.50 +- 0.06) µm/°C, when increasing the peak firing temperature within an industrially applicable range. In this way, the maximum spread limit of diffused silicon in aluminum is predictable and does not depend on the contact area size but on the firing temperature. Therefore, the geometry of the rear side pattern can influence not only series resistance losses within the solar cell but the process of contact formation itself. In addition, too fast cooling lead to Kirkendall void formations instead of an eutectic layer
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530 Physik
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solar cells, silicon alloys, aluminum, aluminium, alloys, compounds, gravity, sintering, contact resistance, chemical interdiffusion, firing (materials), dielectric thin films, passivation, protective coating, scanning electron microscopy, back-surface-field, voids (solid), kirkendall effect
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URREJOLA, Elias, Kristian PETER, Heiko PLAGWITZ, Gunnar SCHUBERT, 2011. Silicon diffusion in aluminum for rear passivated solar cells. In: Applied Physics Letters. 2011, 98(15), 153508. ISSN 0003-6951. Available under: doi: 10.1063/1.3579541BibTex
@article{Urrejola2011Silic-19492,
year={2011},
doi={10.1063/1.3579541},
title={Silicon diffusion in aluminum for rear passivated solar cells},
number={15},
volume={98},
issn={0003-6951},
journal={Applied Physics Letters},
author={Urrejola, Elias and Peter, Kristian and Plagwitz, Heiko and Schubert, Gunnar},
note={Article Number: 153508}
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