Publikation:

A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors

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2001

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Holst, Stefan
Jüngel, Ansgar
Pietra, Paola

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Energy-transport models describe the flow of electrons through a semiconductor device, influenced by diffusive, electrical, and thermal effects. They consist of the continuity equations for the mass and energy, coupled with Poisson's equation for the electrostatic potential. The energy-transport model can be written in a drift-diffusion formulation which is used for the numerical approximation. The stationary equations are discretized with an exponential fitting mixed finite-element method in two space dimensions. Numerical simulations of a ballistic diode are performed and numerical convergence rates are computed. Furthermore, a two-dimensional MESFET device with parabolic band structure is simulated.

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ISO 690HOLST, Stefan, Ansgar JÜNGEL, Paola PIETRA, 2001. A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors
BibTex
@unpublished{Holst2001Mixed-6125,
  year={2001},
  title={A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors},
  author={Holst, Stefan and Jüngel, Ansgar and Pietra, Paola}
}
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