Publikation:

Generation-Recombination Noise in Si-Doped AIN

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2001

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Zeisel, Roland
Baldovino, Silvia
Ambacher, Oliver
Brandt, Martin S.
Stutzmann, Martin

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BOSMAN, Gijs, ed.. Noise in physical systems and 1/f fluctuations ICNF 2001 : proceedings of the 16th International Conference. Singapore: World Scientific Pub. Co., 2001, pp. 69-72. ISBN 978-981-02-4677-8. Available under: doi: 10.1142/9789812811165_0015

Zusammenfassung

We discuss non-thermal noise measurements in AlN:Si. The strong generation-recombination noise observed is shown to be linked to DX-centers. The transition energies for emission from and capture into the DX- ground state are derived from the noise measurements in terms of a simple two-level noise model. The validity of this model is critically discussed.

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530 Physik

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ICNF 2001 : 16th International Conference on Noise in Physical Systems and 1/f Fluctuations, 22. Okt. 2001 - 25. Okt. 2001, Gainesville, Florida
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ISO 690GOENNENWEIN, Sebastian T. B., Roland ZEISEL, Silvia BALDOVINO, Oliver AMBACHER, Martin S. BRANDT, Martin STUTZMANN, 2001. Generation-Recombination Noise in Si-Doped AIN. ICNF 2001 : 16th International Conference on Noise in Physical Systems and 1/f Fluctuations. Gainesville, Florida, 22. Okt. 2001 - 25. Okt. 2001. In: BOSMAN, Gijs, ed.. Noise in physical systems and 1/f fluctuations ICNF 2001 : proceedings of the 16th International Conference. Singapore: World Scientific Pub. Co., 2001, pp. 69-72. ISBN 978-981-02-4677-8. Available under: doi: 10.1142/9789812811165_0015
BibTex
@inproceedings{Goennenwein2001Gener-53559,
  year={2001},
  doi={10.1142/9789812811165_0015},
  title={Generation-Recombination Noise in Si-Doped AIN},
  isbn={978-981-02-4677-8},
  publisher={World Scientific Pub. Co.},
  address={Singapore},
  booktitle={Noise in physical systems and 1/f fluctuations ICNF 2001 : proceedings of the 16th International Conference},
  pages={69--72},
  editor={Bosman, Gijs},
  author={Goennenwein, Sebastian T. B. and Zeisel, Roland and Baldovino, Silvia and Ambacher, Oliver and Brandt, Martin S. and Stutzmann, Martin}
}
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