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Electron spin resonance of Zn1−xMgxO thin films grown by plasma-assisted molecular beam epitaxy

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2010

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Wassner, Thomas A.
Laumer, Bernhard
Althammer, Matthias
Stutzmann, Martin
Eickhoff, Martin
Brandt, Martin S.

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https://doi.org/10.1063/1.3477951
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Applied Physics Letters. American Institute of Physics (AIP). 2010, 97(9), 092102. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.3477951

Zusammenfassung

Zn1−xMgxO thin films with a Mg content x between 0 and 0.42 grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates were investigated by electron spin resonance at 5 K. Above band gap illumination induces a persistent resonance signal, which is attributed to free conduction band electrons. The g-factors of the Zn1−xMgxO epitaxial layers and their anisotropy were determined experimentally and an increase from g∥=1.957 for x=0 to g∥=1.970 for x=0.42 was found, accompanied by a decrease in anisotropy. A comparison with g-factors of the AlxGa1−xN system is also given.

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ISO 690WASSNER, Thomas A., Bernhard LAUMER, Matthias ALTHAMMER, Sebastian T. B. GOENNENWEIN, Martin STUTZMANN, Martin EICKHOFF, Martin S. BRANDT, 2010. Electron spin resonance of Zn1−xMgxO thin films grown by plasma-assisted molecular beam epitaxy. In: Applied Physics Letters. American Institute of Physics (AIP). 2010, 97(9), 092102. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.3477951
BibTex
@article{Wassner2010Elect-53063,
  year={2010},
  doi={10.1063/1.3477951},
  title={Electron spin resonance of Zn<sub>1−x</sub>Mg<sub>x</sub>O thin films grown by plasma-assisted molecular beam epitaxy},
  number={9},
  volume={97},
  issn={0003-6951},
  journal={Applied Physics Letters},
  author={Wassner, Thomas A. and Laumer, Bernhard and Althammer, Matthias and Goennenwein, Sebastian T. B. and Stutzmann, Martin and Eickhoff, Martin and Brandt, Martin S.},
  note={Article Number: 092102}
}
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