Publikation: Investigations on the long time behavior of the metastable boron-oxygen complex in crystalline silicon
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2008
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Published
Erschienen in
Progress in Photovoltaics: Research Application. 2008, 16(2), pp. 135-140. Available under: doi: 10.1002/pip.779
Zusammenfassung
Boron and oxygen contamination in Czochralski-grown (Q) silicon leads to a degradation of the minority charge carrier lifetime within short times due to the formation of recombination active complexes. The formation of these complexes is investigated for longer times showing a further development of the defect. This development called 'regeneration' is triggered by illumination or appliedforward voltages and leads to a new state of the defect. This new state of the defect is proven to be less recombination active allowing higher stable minority carrier lifetimes and conversion efficiencies of solar cells. The influences of temperature and light intensity are discussed.
Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
silicon, Czoehralsici, degradation, lifetime, boron-oxygen, defect
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HERGUTH, Axel, Gunnar SCHUBERT, Martin KÄS, Giso HAHN, 2008. Investigations on the long time behavior of the metastable boron-oxygen complex in crystalline silicon. In: Progress in Photovoltaics: Research Application. 2008, 16(2), pp. 135-140. Available under: doi: 10.1002/pip.779BibTex
@article{Herguth2008Inves-900,
year={2008},
doi={10.1002/pip.779},
title={Investigations on the long time behavior of the metastable boron-oxygen complex in crystalline silicon},
number={2},
volume={16},
journal={Progress in Photovoltaics: Research Application},
pages={135--140},
author={Herguth, Axel and Schubert, Gunnar and Käs, Martin and Hahn, Giso}
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<dcterms:abstract xml:lang="eng">Boron and oxygen contamination in Czochralski-grown (Q) silicon leads to a degradation of the minority charge carrier lifetime within short times due to the formation of recombination active complexes. The formation of these complexes is investigated for longer times showing a further development of the defect. This development called 'regeneration' is triggered by illumination or appliedforward voltages and leads to a new state of the defect. This new state of the defect is proven to be less recombination active allowing higher stable minority carrier lifetimes and conversion efficiencies of solar cells. The influences of temperature and light intensity are discussed.</dcterms:abstract>
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