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Self-sufficient minority carrier lifetime in silicon from quasi-steady-state photoluminescence

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2012

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Giesecke, Johannes
Warta, Wilhelm

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http://nbn-resolving.de/urn:nbn:de:bsz:352-250794
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https://doi.org/10.1002/pssa.201228383
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physica status solidi (a). 2012, 209(11), pp. 2286-2290. ISSN 1862-6300. eISSN 1521-396X. Available under: doi: 10.1002/pssa.201228383

Zusammenfassung

Quasi-steady-state photoluminescence is a versatile technique to determine carrier lifetime in silicon. A recent approach extracts carrier lifetime without a priori information about dopant concentration [Appl. Phys. Lett. 97, 092109 (2010)]. It utilizes the phase shift between a time-modulated optical irradiation and the radiative recombination of a sample, while requiring a minimum of two measurements. The present paper is aimed at a generalization thereof that requires only one measurement. It brings about a substantial experimental simplification, significantly improved accuracy and precision, and it opens up paths to access material properties other than lifetime.

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ISO 690GIESECKE, Johannes, Martin SCHUBERT, Wilhelm WARTA, 2012. Self-sufficient minority carrier lifetime in silicon from quasi-steady-state photoluminescence. In: physica status solidi (a). 2012, 209(11), pp. 2286-2290. ISSN 1862-6300. eISSN 1521-396X. Available under: doi: 10.1002/pssa.201228383
BibTex
@article{Giesecke2012Selfs-25079,
  year={2012},
  doi={10.1002/pssa.201228383},
  title={Self-sufficient minority carrier lifetime in silicon from quasi-steady-state photoluminescence},
  number={11},
  volume={209},
  issn={1862-6300},
  journal={physica status solidi (a)},
  pages={2286--2290},
  author={Giesecke, Johannes and Schubert, Martin and Warta, Wilhelm}
}
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